Fairchild Semiconductor SGP10N60RUFD Datasheet

SGP10N60RUFD

SGP10N60RUFD

Short Circuit Rated IGBT

General Description

Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G C E

TO-220

Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 2.2 V @ IC = 10A

CE(sat)

= 42ns (typ.)

rr

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGP10N60RUFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

T

SC

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C16 A
Collector Current @ T
Pulsed Collector Current 30 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C10 A

C

= 100°C30 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

(IGBT) Thermal Resistance, Junction-to-Case -- 1.6 °C/W

R

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 2.5 °C/W

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2002 Fairchild Semiconductor Corporation SGP10N60RUFD Rev. A1

SGP10N60RUFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 10mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 10A

C

= 16A

C

VGE = 15V

,

VGE = 15V

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

-- 2.5 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 115 -- pF
Reverse Transfer Capacitance -- 25 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 660 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 356 500 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 613 860 uJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 36 50 ns
Fall Time -- 158 200 ns
Turn-On Switching Loss -- 141 -- uJ

V

= 300 V, IC = 10A,

CC

R

= 20Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 215 -- uJ

Turn-On Delay Time

-- 16 -- ns
Rise Time -- 33 -- ns
Turn-Off Delay Time -- 42 60 ns
Fall Time -- 242 350 ns
Turn-On Switching Loss -- 161 -- uJ

= 300 V, IC = 10A,

V

CC

= 20Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi n g Lo ss -- 452 -- uJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 5 10 nC
Gate-Collector Charge -- 8 16 nC

VCC = 300 V, V

@

TC = 100°C

= 300 V, IC = 10A,

V

CE

V

= 15V

GE

GE

= 15V

10 -- -- us

-- 30 45 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 12A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

= 12A,

I

F

di/dt = 200A/µs

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

= 25°C

T

C

T

= 100°C

C

T

= 25°C

C

= 100°C

T

C

-- 1.4 1.7

-- 1.3 --

-- 42 60

-- 60 --

-- 3.5 6.0

-- 5.6 --

-- 80 180

-- 220 --

V

ns

A

nC

SGP10N60RUFD Rev. A1

SGP10N60RUFD

[A]

C

Collector Current, I

30

Common Emitter
V

GE

25

T

C

T

C

20

15

10

5

0

= 15V

━━

= 25℃
= 125℃ ------

110

Collector - Emitter Voltage, VCE [V]

40

Common Emitter

℃

TC = 25

35

30

[A]

C

25

20

15

Collector Current, I

10

5

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

4.0
Comm o n Emitt er
V

= 15V

GE

3.5

[V]

CE

3.0

2.5

2.0

1.5

Collector - Emitter Voltage, V

1.0

-50 0 50 100 150

Case Temperature, TC [℃]

20A

10A

IC = 5A

16

14

12

10

8

6

Load Current [A]

4

Duty cycle : 50%

2

0

℃

T

= 100

C

Power Dissipation = 18 W

0.1 1 10 100 1000

VCC = 300V
Load Current : pea k of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

Common Emitter

℃

T

= 25

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 5A

10A

20A

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 4. Load Current vs. Frequ ency

20

Common Emitter

℃

= 125

T

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 5A

Gate - Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. VGE

GE

10A

20A

SGP10N60RUFD Rev. A1