Fairchild Semiconductor SGL50N60RUFD Datasheet

SGL50N60RUFD

SGL50N60RUFD

Short Circuit Rated IGBT

General Description

Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-264

G

C

E

Features

• Short circuit rated 10us @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 2.2 V @ IC = 50A

CE(sat)

= 50ns (typ.)

rr

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGL50N60RUFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

T

SC

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C80 A
Collector Current @ T
Pulsed Collector Current 150 A
Diode Continuous Forward Current @ TC = 100°C30 A
Diode Maximum Forward Current 90 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C 250 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C50 A

C

= 100°C 100 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 °C/W

R

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 1.0 °C/W

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2002 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. A1

SGL50N60RUFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage Ic = 50mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 50A

C

= 80A

C

VGE = 15V

,

VGE = 15V

GE

5.0 6.0 8.5 V

-- 2.2 2.8 V

-- 2.5 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 399 -- pF
Reverse Transfer Capacitance -- 139 -- pF

=30V, VGE = 0V,

V

CE

f = 1MHz

-- 3311 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 2.71 3.8 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 4.01 5.62 mJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 26 -- ns
Rise Time -- 89 -- ns
Turn-Off Delay Time -- 6 6 100 ns
Fall Time -- 118 200 ns
Turn-On Switching Loss -- 1.68 -- mJ

V

= 300 V, IC = 50A,

CC

R

= 5.9Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 1.03 -- mJ

Turn-On Delay Time

-- 28 -- ns
Rise Time -- 91 -- ns
Turn-Off Delay Time -- 6 8 110 ns
Fall Time -- 261 400 ns
Turn-On Switching Loss -- 1.7 -- mJ

= 300 V, IC = 50A,

V

CC

= 5.9Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 2.31 -- mJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 25 35 nC
Gate-Collector Charge -- 70 100 nC

VCC = 300 V, V

@

TC = 100°C

= 300 V, IC = 50A,

V

CE

V

= 15V

GE

= 15V

GE

10 -- -- us

-- 145 210 nC

Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 30A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

= 30A,

I

F

di/dt = 200 A/us

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

= 25°C

T

C

T

= 100°C

C

T

= 25°C

C

= 100°C

T

C

-- 1.9 2.8

-- 1.8 --

-- 70 100

-- 140 --

-- 6 7.8

-- 8 --

-- 200 360

-- 580 --

V

ns

A

nC

SGL50N60RUFD Rev. A1

SGL50N60RUFD

[A]

C

Collector Current, I

140

120

100

80

60

40

20

0

Common Emitter

= 15V

V

GE

━━

T

= 25℃

C

= 125℃ ------

T

C

110

Collector - Emitter Voltage, VCE [V]

15V

Common Emitter

[A]

Collector Current, I

140

120

C

100

80

60

40

20

℃

TC = 25

0

02468

20V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

[V]

CE

5

Common Emitter
V

= 15V

GE

4

3

2

100A

50A

IC = 30A

60

50

40

30

Load Current [A]

20

VCC = 300V
Load Current : peak of s q uar e w a v e

1

Collector - Emitter Voltage, V

0

-50 0 50 100 150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case

Temperature at Variant Current Level

20

Common Emitter

℃

T

= 25

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 12 16 20

IC = 30A

Gate - Emitter Vo ltag e, VGE [V]

50A

100A

10

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 70W

0

1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequency

20

Common E mitter

℃

T

= 125

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 12 16 20

IC = 30A

Gate - Em itter V oltage, VGE [V]

100A

50A

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

GE

Fig 6. Saturation Voltage vs. V

GE

SGL50N60RUFD Rev. A1