Fairchild Semiconductor SGL160N60UFD Datasheet

SGL160N60UFD

Ultrafast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.

TO-264

GCE

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD: t

G

(sat) = 2.1 V @ IC = 80A

CE

= 75nS (typ.)

rr

C

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGL160N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V Gate-Emitter Voltage ± 20 V Collector Current @ TC = 25°C 160 A Collector Current @ T Pulsed Collector Current 300 A Diode Continuous Forward Current @ TC =100°C25 A Diode Maximum Forward Current 280 A M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C 250 W Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C Maximum Lead Tem p. for So ldering Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C80 A

C

= 100°C 100 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 0. 83 °C/W

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

SGL160N60UFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B ∆T

I

CES

I

GES

CES

VCES J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown Voltage Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 80mA, VCE = V

= 80A, VGE = 15V

Collector to Emitter Saturation Voltage

I

C

I

= 160A, VGE = 15V

C

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance Output Capacitance -- 600 -- pF Reverse Transfer Capacitance -- 200 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 5000 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 4260 5000 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 5885 -- uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 40 -- ns Rise Time -- 101 -- ns Turn-Off Delay Time -- 90 13 0 ns Fall Time -- 75 150 ns Turn-On Switching Loss -- 2500 -- uJ

V

= 300 V, IC = 80A,

CC

R

= 3.9Ω, VGE=15V

G

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 1760 -- uJ

Turn-On Delay Time

-- 45 -- ns Rise Time -- 105 -- ns Turn-Off Delay Time -- 140 20 0 ns Fall Time -- 122 250 ns Turn-On Switching Loss -- 2785 -- uJ

= 300 V, IC = 80A,

V

CC

= 3.9Ω, V

R

G

GE

Inductive Load, T

= 15V

= 125°C

C

Turn-Off Switching Loss -- 3100 -- uJ

Total Gate Charge Gate-Emitter Charge -- 60 100 nC Gate-Collector Charge -- 95 150 nC

= 300 V, IC = 80A,

V

CE

= 15V

V

GE

-- 345 520 nC

Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 25A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

I

= 25A,

F

di/ dt = 200 A/us

C

T

C

T

C

T

C

T

C

T

C

T

C

T

C

= 25°C = 100°C = 25°C = 100°C = 25°C = 100°C = 25°C = 100°C

-- 1.4 1.7

-- 1.3 --

-- 50 95

-- 105 --

-- 4.5 10

-- 8.5 --

-- 112 375

-- 420 --

V

ns

A

nC

SGL160N60UFD Rev. B1

SGL160N60UFD

500

Common Emitter

℃

TC = 25

400

[A]

C

300

200

Collector Current, I

100

0

02468

20V

15V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Comm on Emitter V

= 15V

[V]

GE

CE

3

2

160A

80A

12V

240

Common Emitter V

= 15V

GE

T

= 25℃

C

200

T

= 125℃

C

160

[A]

C

120

80

Collect or Current, I

40

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage Characteristics

120

100

80

60

VCC = 300V Load Current : peak of square wave

IC = 40A

1

Collector - Emi tter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 40A

0 4 8 121620

80A

Gate - Emitter Vo ltage, VGE [V]

160A

Common Emitter

℃

T

= 25

C

Load Curren t [A]

40

20

Duty cycle : 50%

℃

T

= 100

C

Power D issipation = 130W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 40A

0 4 8 12 16 20

80A

Gate - Emitter Voltage, VGE [V]

160A

Common Emitter

= 125

T

C

℃

Fig 6. Saturation Voltage vs. VGE

Fig 7. Saturation Voltage vs. V

GE

SGL160N60UFD Rev. B1