Fairchild Semiconductor SGL160N60UF Datasheet
SGL160N60UF
SGL160N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
TO-264
GCE
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
C
C
G
G
E
E
(sat) = 2.1 V @ IC = 80A
CE
IGBT
Absolute Maximum Ratings T
Symbol Description SGL160N60UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C 160 A
Collector Current @ T
Pulsed Collector Current 300 A
M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C 250 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
= 25°C unless otherwise noted
C
= 100°C80 A
C
= 100°C 100 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case -- 0.5 °C/W
Thermal Resistance, Junction-to-Ambient -- 25 °C/W
©2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1
SGL160N60UF
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 80mA, VCE = V
= 80A, VGE = 15V
Collector to Emitter
Saturation Voltage
I
C
I
= 160A, VGE = 15V
C
GE
3.5 4.5 6.5 V
-- 2.1 2.6 V
-- 2.6 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 600 -- pF
Reverse Transfer Capacitance -- 200 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 5000 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 4260 5000 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 5885 -- uJ
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 40 -- ns
Rise Time -- 101 -- ns
Turn-Off Delay Time -- 90 130 ns
Fall Time -- 75 150 ns
Turn-On Switching Loss -- 2500 -- uJ
V
= 300 V, IC = 80A,
CC
R
= 3.9Ω, VGE=15V
G
Inductive Load, T
= 25°C
C
Turn-Off Switching Loss -- 1760 -- uJ
Turn-On Delay Time
-- 45 -- ns
Rise Time -- 105 -- ns
Turn-Off Delay Time -- 140 200 ns
Fall Time -- 122 250 ns
Turn-On Switching Loss -- 2785 -- uJ
= 300 V, IC = 80A,
V
CC
= 3.9Ω, V
R
G
GE
Inductive Load, T
= 15V
= 125°C
C
Turn-Off Switching Loss -- 3100 -- uJ
Total Gate Charge
Gate-Emitter Charge -- 60 100 nC
Gate-Collector Charge -- 95 150 nC
= 300 V, IC = 80A,
V
CE
= 15V
V
GE
-- 345 520 nC
Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH
©2002 Fairchild Semiconductor Corporation
SGL160N60UF Rev. A1
SGL160N60UF
500
Common Emitter
℃
TC = 25
400
[A]
C
300
200
Collector Current, I
100
0
02468
20V
15V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
Comm on Emitt e r
V
= 15V
[V]
GE
CE
3
2
160A
80A
12V
240
Common Emitter
V
= 15V
GE
T
= 25℃
C
200
T
= 125℃
C
160
[A]
C
120
80
Collect or Current, I
40
0
0.5 1 10
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage
Characteristics
120
100
80
60
VCC = 300V
Load Current : peak of square wave
IC = 40A
1
Collector - Emi tter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Va riant Current Level
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 40A
0 4 8 121620
80A
Gate - Emitter Vo ltage, VGE [V]
160A
Common Emitter
℃
T
= 25
C
Load Curren t [A]
40
20
Duty cycle : 50%
℃
T
= 100
C
Power D issipation = 130W
0
0.1 1 10 100 1000
Frequency [KHz]
Fig 4. Load Current vs. Frequency
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 40A
0 4 8 12 16 20
80A
Gate - Emitter Voltage, VGE [V]
160A
Common Emitter
= 125
T
C
℃
Fig 6. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
Fig 7. Saturation Voltage vs. V
GE
SGL160N60UF Rev. A1
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