Fairchild Semiconductor SGH80N60UF Datasheet

SGH80N60UF

IGBT

SGH80N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

Absolute Maximum Ratings T

Symbol Description SGH80N60UF Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C80 A
Collector Current @ T
Pulsed Collector Current 220 A
Diode Continuous Forward Current @ TC = 100°C25 A
Diode Maximum Forward Current 280 A
Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds

TO-3P

= 25°C unless otherwise noted

C

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

C

C

G

G

E

E

= 100°C40 A

C

= 100°C78 W

C

300 °C

= 2.1 V @ IC = 40A

CE(sat)

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation SGH80N60UF Rev. A1

Thermal Resistance, Junction-to-Case -- 0.64 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGH80N60UF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 40mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 40A

C

= 80A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 350 -- pF
Reverse Transfer Capacitance -- 100 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 2790 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1160 1500 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1580 2000 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 50 -- ns
Turn-Off Delay Time -- 9 0 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 570 -- uJ

V

= 300 V, IC = 40A,

CC

R

= 5Ω, V

G

GE

= 15V,

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 59 0 -- uJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 55 -- ns
Turn-Off Delay Time -- 150 200 ns
Fall Time -- 160 250 ns
Turn-On Switching Loss -- 630 -- uJ

= 300 V, IC = 40A,

V

CC

R

G

= 5Ω, V

GE

= 15V,

Inductive Load, T

= 125°C

C

Turn-Off Switchi n g Loss -- 94 0 -- u J

Total Gate Charge
Gate-Emitter Charge -- 25 40 nC
Gate-Collector Charge -- 60 90 nC

= 300 V, IC = 40A,

V

CE

V

GE

= 15V

-- 175 250 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

©2002 Fairchild Semiconductor Corporation

SGH80N60UF Rev. A1

SGH80N60UF

250

Common Emitter

℃

TC = 25

200

[A]

C

150

100

Collector Current, I

50

0

02468

20V

15V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Comm on Emitt er
V

= 15V

[V]

CE

GE

3

2

80A

40A

12V

120

Commo n Emitter
V

= 15V

GE

T

= 25℃

C

100

T

= 125℃

C

80

[A]

C

60

40

Collector Current, I

20

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

60

50

40

30

VCC = 300V
Load Current : peak of square wave

IC = 20A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 20A

40A

Gate - Emitter Voltage, VGE [V]

80A

Common Emitter

℃

T

= 25

C

Load Current [A]

20

10

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 60W

0

0.1 1 10 100 1000

Frequency [Khz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 20A

048121620

40A

Gate - Emitter Voltage, VGE [V]

80A

Common Emitter

℃

T

= 125

C

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. Saturation Voltage vs. VGE

GE

SGH80N60UF Rev. A1