Fairchild Semiconductor SGH5N120RUFD Datasheet

SGH5N120RUFD

IGBT

SGH5N120RUFD

Short Circuit Rated IGBT

General Description

Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

Absolute Maximum Ratings T

Symbol Description SGH5N120RUFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

T

SC

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C8 A
Collector Current @ T
Pulsed Collector Current 15 A
Diode Continuous Forward Current @ TC = 100°C5 A
Diode Maximum Forward Current 30 A
Short Circuit Withstand Time @ TC = 100°C10 µs
Maximum Power Dissipation @ TC = 25°C74 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering

Purposes, 1/8” from case for 5 seconds

TO-3P

= 25°C unless otherwise noted

C

Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 100°C5 A

C

= 100°C30 W

C

300 °C

= 2.3 V @ IC = 5A

CE(sat)

= 55ns (typ.)

rr

C

C

E

E

Thermal Characteristics

Symbol Parameter Typ. Max. Units

(IGBT) Thermal Resistance, Junction-to-Case -- 1.68 °C/W

R

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 2.4 °C/W

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation SGH5N120RUFD Rev. B2

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGH5N120RUFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 1 mA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 5mA, VCE = V

,

= 5A
= 8A

VGE = 15V

,

VGE = 15V

Collector to Emitter
Saturation Voltage

I

C

I

C

GE

3.5 5.5 7.5 V

-- 2.3 3.0 V

-- 2.8 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 45 -- pF
Reverse Transfer Capacitance -- 16 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 520 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 0.68 0.95 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 0.88 1.28 mJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 20 -- ns
Rise Time -- 60 -- ns
Turn-Off Delay Time -- 50 90 ns
Fall Time -- 150 300 ns
Turn-On Switching Loss -- 0.35 -- mJ

V

= 600 V, IC = 5A,

CC

R

= 30Ω, VGE = 15V,

G

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 0 .33 -- mJ

Turn-On Delay Time

-- 20 -- ns
Rise Time -- 70 -- ns
Turn-Off Delay Time -- 70 130 ns
Fall Time -- 200 400 ns
Turn-On Switching Loss -- 0.38 -- mJ

= 600 V, IC = 5A,

V

CC

= 30Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 0 .50 -- mJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 3 5 nC
Gate-Collector Charge -- 13 18 nC

VCC = 600 V, V

@

TC = 100°C

= 600 V, IC = 5A,

V

CE

V

= 15V

GE

= 15V

GE

10 -- -- µs

-- 28 42 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 5A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

= 5A

I

F

dI/dt = 200 A/µs

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

= 25°C

T

C

T

= 100°C

C

T

= 25°C

C

= 100°C

T

C

-- 2.9 3.5

-- 2.7 --

-- 55 100

-- 70 --

-- 5.0 7.0

-- 6.5 --

-- 140 350

-- 230 --

V

ns

A

nC

SGH5N120RUFD Rev. B2

SGH5N120RUFD

40

Common Emitter

℃

TC = 25

30

[A]

C

20

10

Collector Current, I

0

0246810

20V

17V

15V

12V

VGE = 10V

Collector - E mitter Voltage, VCE [V]

25

Common Emitter

= 15V

V

GE

= 25℃

T

C

20

TC = 125℃

[A]

C

15

10

Collector Current, I

5

0

0246810

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

3.2

3.0

[V]

CE

2.8

2.6

Common Emitter

= 15V

V

GE

8A

12

8

VCC = 600V
Load Current : peak of square wave

2.4

2.2

2.0

Collector - Emitte r Voltage, V

1.8
25 50 75 100 125 150

IC = 5A

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

Common Emitter

℃

= 25

T

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 3A

Gate - Emitter Voltage, VGE [V]

10A

5A

4

Load Current [A]

Duty cycle : 50%

℃

TC = 100
Power Diss ipation = 15W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequency

20

Common Emitter

℃

TC = 125

16

[V]

CE

12

8

10A

4

Collector - Emitter Voltage, V

0

048121620

Gate - Emitter Voltage, VGE [V]

5A

IC = 3A

Fig 5. Saturation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. S at uration Voltage vs. VGE

GE

SGH5N120RUFD Rev. B2