Fairchild Semiconductor SGH30N60RUF Datasheet
SGH30N60RUF
IGBT
SGH30N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
Absolute Maximum Ratings T
Symbol Description SGH30N60RUF Units
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C48 A
Collector Current @ T
Pulsed Collector Current 90 A
Short Circuit Withstand Time @ TC =100°C10 us
Maximum Power Dissipation @ T
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering
Purposes, 1/8” from Case for 5 Seconds
TO-3P
= 25°C unless otherwise noted
C
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
C
C
G
G
E
E
= 100°C30 A
C
= 25°C 235 W
C
= 100°C90 W
C
300 °C
= 2.2 V @ IC = 30A
CE(sat)
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation SGH30N60RUF Rev. A1
Thermal Resistance, Junction-to-Case -- 0.53 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGH30N60RUF
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 30mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 30A
C
= 48A
C
VGE = 15V
,
VGE = 15V
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
-- 2.5 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 310 -- pF
Reverse Transfer Capacitance -- 74 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 1970 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 1733 2430 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 2477 3470 uJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 65 -- ns
Turn-Off Delay Time -- 54 80 ns
Fall Time -- 138 200 ns
Turn-On Switching Loss -- 919 -- uJ
V
= 300 V, IC = 30A,
CC
R
= 7Ω, V
G
GE
= 15V,
Inductive Load, T
= 25°C
C
Turn-Off Switching Loss -- 814 -- uJ
Turn-On Delay Time
-- 34 -- ns
Rise Time -- 67 -- ns
Turn-Off Delay Time -- 60 90 ns
Fall Time -- 281 400 ns
Turn-On Switching Loss -- 921 -- uJ
= 300 V, IC = 30A,
V
CC
R
G
= 7Ω, V
GE
= 15V,
Inductive Load, T
= 125°C
C
Turn-Off Switching Loss -- 1556 -- uJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 17 25 nC
Gate-Collector Charge -- 39 55 nC
VCC = 300 V, V
@
TC = 100°C
= 300 V, IC = 30A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- us
-- 85 120 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2002 Fairchild Semiconductor Corporation
SGH30N60RUF Rev. A1
SGH30N60RUF
[A]
C
Collector Current, I
90
Common Emitter
80
V
GE
T
C
70
T
C
60
50
40
30
20
10
0
= 15V
━━
= 25℃
= 125℃ ------
110
Collector - Emitter Voltage, VCE [V]
90
Common Emitter
℃
TC = 25
80
70
[A]
C
60
50
40
30
Collector Current, I
20
10
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
5
Common Emitter
V
= 15V
GE
[V]
4
CE
3
2
1
Collector - Emitter Volt age, V
0
-50 0 50 100 150
Case Temperature, TC [℃]
60A
45A
30A
IC = 15A
40
35
30
25
20
15
Load Current [A]
10
Duty cycle : 50%
5
0
℃
T
= 100
C
Power Dissipation = 45W
0.1 1 10 100 1000
VCC = 300V
Load Current : peak of s q uar e w a v e
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
[V]
CE
12
8
4
Collector - Emit ter Vo ltage, V
0
4 8 12 16 20
IC = 15A
Gate - Emitter Voltage, VGE [V]
Fig 5. Satur ation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
30A
60A
Fig 4. Load Current vs. Frequency
Common Emitter
℃
= 25
T
C
Fig 6. Saturation Voltage vs. VGE
GE
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage , V
0
4 8 12 16 20
30A
IC = 15A
Gate - Emitter Voltage, VGE [V]
Common Emitter
= 125
T
C
60A
℃
SGH30N60RUF Rev. A1
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