Fairchild Semiconductor SGH20N60RUFD Datasheet
SGH20N60RUFD
IGBT
SGH20N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
Absolute Maximum Ratings T
Symbol Description SGH20N60RUFD Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C32 A
Collector Current @ T
Pulsed Collector Current 60 A
Diode Continuous Forward Current @ TC = 100°C25 A
Diode Maximum Forward Current 220 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering
Purposes, 1/8” from Case for 5 Seconds
TO-3P
= 25°C unless otherwise noted
C
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
G
G
= 100°C20 A
C
= 100°C75 W
C
300 °C
= 2.2 V @ IC = 20A
CE(sat)
= 50ns (typ.)
rr
C
C
E
E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
(IGBT) Thermal Resistance, Junction-to-Case -- 0.64 °C/W
R
θJC
R
(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation SGH20N60RUFD Rev. B1
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGH20N60RUFD
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 20mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 20A
C
= 32A
C
VGE = 15V
,
VGE = 15V
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
-- 2.5 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 254 -- pF
Reverse Transfer Capacitance -- 47 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 1323 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 997 1400 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 1599 2240 uJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 49 -- ns
Turn-Off Delay Time -- 4 8 70 ns
Fall Time -- 152 200 ns
Turn-On Switching Loss -- 524 -- uJ
V
= 300 V, IC = 20A,
CC
R
= 10Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 47 3 -- u J
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 51 -- ns
Turn-Off Delay Time -- 5 2 75 ns
Fall Time -- 311 400 ns
Turn-On Switching Loss -- 568 -- uJ
= 300 V, IC = 20A,
V
CC
= 10Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 1031 -- uJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 10 15 nC
Gate-Collector Charge -- 25 40 nC
VCC = 300 V, V
@
TC = 100°C
= 300 V, IC = 20A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- us
-- 55 80 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
T
V
FM
t
rr
I
rr
Q
rr
©2002 Fairchild Semiconductor Corporation
Diode Forward Voltage IF = 25A
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
= 25A,
I
F
di/dt = 200 A/us
= 25°C
C
= 100°C
T
C
TC = 25°C
= 100°C
T
C
= 25°C
T
C
T
= 100°C
C
T
= 25°C
C
= 100°C
T
C
-- 1.4 1.7
-- 1.3 --
-- 50 95
-- 105 --
-- 4.5 10
-- 8.5 --
-- 112 375
-- 420 --
V
ns
A
nC
SGH20N60RUFD Rev. B1
SGH20N60RUFD
[A]
C
60
Common Emitter
TC = 25
50
40
30
20
℃
20V
15V
12V
VGE = 10V
Collector Current, I
10
0
02468
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
5
Common Emitter
V
= 15V
GE
[V]
4
CE
3
2
1
Collector - Emit ter Voltage, V
0
-50 0 50 100 150
Case Temperature, TC [℃]
40A
30A
20A
IC = 10A
60
Common Emitter
= 15V
V
GE
50
[A]
C
40
30
20
Collector Current, I
10
0
T
= 25℃
C
= 125℃ ------
T
C
━━
110
Collector - Emitter Voltag e , VCE [V]
Fig 2. Typical Saturation Vol ta ge Characteristics
28
24
20
16
12
Load Current [A]
8
Duty cycle : 50%
4
0
℃
= 100
T
C
Power Dissipation = 32W
0.1 1 10 100 1000
VCC = 300V
Load Current : peak of square w ave
Frequency [KHz]
Fig 3. Satur ation Voltage vs. Case
Tem per at ure at Variant Current Level
20
Common Emitter
℃
T
= 25
C
16
[V]
CE
12
8
4
Collector - Emit t er Voltage, V
0
048121620
IC = 10A
20A
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
Fig 4. Load Current vs. Frequency
20
Common Emitter
℃
T
= 125
C
16
[V]
CE
12
8
40A
Fig 6. Saturation Voltage vs. VGE
GE
4
Collector - Emitter Voltage, V
0
048121620
IC = 10A
Gate - Emitter Voltage, VGE [V]
20A
40A
SGH20N60RUFD Rev. B1
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