Fairchild Semiconductor SGH20N120RUF Datasheet
SGH20N120RUF
IGBT
SGH20N120RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) RUF series provides low conduction and switching
losses as well as short circuit ruggedness. The RUF series
is designed for the applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
Absolute Maximum Ratings T
Symbol Description SGH20N120RUF Units
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C32 A
Collector Current @ T
Pulsed Collector Current 60 A
Short Circuit Withstand Time @ TC = 100°C10 µs
Maximum Power Dissipation @ TC = 25°C 230 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering
Purposes, 1/8” from case for 5 seconds
TO-3P
= 25°C unless otherwise noted
C
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
C
C
G
G
E
E
= 100°C20 A
C
= 100°C92 W
C
300 °C
= 2.3 V @ IC = 20A
CE(sat)
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation SGH20N120RUF Rev. B2
Thermal Resistance, Junction-to-Case -- 0.54 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGH20N120RUF
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 1 mA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 20mA, VCE = VGE 3.5 5.5 7.5 V
Collector to Emitter
Saturation Voltage
I
I
= 20A
C
= 32A
C
,
VGE = 15V
,
VGE = 15V
-- 2.3 3.0 V
-- 2.8 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 170 -- pF
Reverse Transfer Capacitance -- 60 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 2000 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 2.60 3.65 mJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 3.50 5.08 mJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 60 -- ns
Turn-Off Delay Time -- 70 130 ns
Fall Time -- 150 300 ns
Turn-On Switching Loss -- 1.30 -- mJ
V
= 600 V, IC = 20A,
CC
R
= 15Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 1. 3 0 -- mJ
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 70 -- ns
Turn-Off Delay Time -- 90 165 ns
Fall Time -- 200 400 ns
Turn-On Switching Loss -- 1.50 -- mJ
= 600 V, IC = 20A,
V
CC
= 15Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 2. 0 0 -- mJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 15 25 nC
Gate-Collector Charge -- 43 65 nC
VCC = 600 V, V
@
TC = 100°C
= 600 V, IC = 20A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- µs
-- 95 140 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2002 Fairchild Semiconductor Corporation
SGH20N120RUF Rev. B2
SGH20N120RUF
140
120
100
[A]
C
80
60
40
TC = 25
℃
Collector Current, I
20
0
0246810
20V
17V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
15V
12V
100
Common Emitter
= 15V
V
GE
= 25℃
T
C
80
TC = 125℃
[A]
C
60
40
Collector Current, I
20
0
0246810
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
3.2
Common Emitter
= 15V
V
GE
3.0
[V]
CE
2.8
2.6
2.4
2.2
2.0
Collector - Emitter Voltage, V
1.8
25 50 75 100 125 150
Case Temperature, TC [℃]
32A
IC = 20A
40
30
20
Load Current [A]
10
Duty cycle : 50%
℃
TC = 100
Power Dissipation = 45W
0
0.1 1 10 100 1000
VCC = 600V
Load Current : peak of square wave
Frequency [KHz]
Fig 3. Satur ation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
℃
TC = 25
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
0 4 8 12 16 20
40A
20A
IC = 10A
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
Fig 4. Load Current vs. Frequency
20
Common Emitter
℃
= 125
T
C
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
Gate - Emitter V oltage , VGE [V]
Fig 6. S at uration Voltage vs. VGE
GE
40A
20A
IC = 10A
SGH20N120RUF Rev. B2
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