Fairchild Semiconductor SGH13N60UFD Datasheet
(1)
SGH13N60UFD
N-CHANNEL IGBT
FEATURES
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=6.5A)
* High Input Impedance
*CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls
* General Purpose Inverters
* Robotics , Servo Controls
* Power Supply
* Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
Symbol
Characteristics
TO-3P
G
Rating
C
E
Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
Tj
Tstg
T
L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current @ Tc = 25°C
Collector Current @ Tc = 100°C
Pulsed Collector Current
Diode Continuous Forward Current @ Tc = 100°C
Diode Maximum Forward Current
Maximum Power Dissipation @Tc = 25°C
Maximum Power Dissipation @Tc = 100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. For Soldering
Purpo s es , 1/8 ” from case for 5 seconds
600
±20
13
6.5
52
8
56
60
25
-55 ~ 150
-55 ~ 150
300
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes:
1999 Fairchild Semiconductor Corporation
Repeti ti v e ra ti ng : Pulse width limited by max. junction temperature
Rev.B
SGH13N60UFD
ELECTRICAL CHARACTERISTICS (IGBT PART)
(Tc=25
°C,Unless Otherwise Specified)
N-CHANNEL IGBT
Symbol
BV
CES
V
∆
CES/
T
∆
J
V
GE(th)
I
CES
I
GES
VCE(sat)
Cies
Coes
Cres
Characteristics
C - E Breakdown Volta ge
Temperature Coeff. of
Breakdown Voltage
G - E threshold voltag e
Collector cutoff Current
G - E leakage Current
Collector to Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Test Conditions
VGE = 0V , IC = 250uA
= 0V , IC = 1mA
V
GE
I
= 6.5mA , VCE = V
C
VCE = V
= V
V
GE
Ic=6.5A, V
Ic=13A, V
= 0V , f = 1MHz
V
GE
= 30V
V
CE
, VGE = 0V
CES
, VCE = 0V
GES
= 15V
GE
= 15V
GE
GE
Min
600
-
4.0
-
-
-
-
-
-
-
Typ
-
0.6
5.5
-
-
1.95
2.6
375
63
13
Max
-
-
7.5
250
100
2.6
-
-
-
-
Units
V
V/°C
V
uA
nA
V
V
pF
pF
pF
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn on delay time
Turn on rise time
Turn off delay time
Turn off fall time
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
= 300V , IC = 6.5A
CC
= 15V
V
GE
= 50
R
Ω
G
Inductive Load
Vcc = 300V
= 15V
V
GE
Ic = 6.5A
Measured 5mm from PKG
-
15
-
26
-
50
-
110
-
0.1
-
0.1
-
0.2
-
25
-
-
-
7
8
14
-
-
80
220
-
-
0.3
37
11
12
-
nS
nS
nS
nS
mJ
mJ
mJ
nC
nC
nC
nH
y
y
y
)
)
SGH13N60UFD
ELECTRICAL CHARACTERISTICS (DIODE PART)
(Tc=25°C,Unless Otherwise Specified)
N-CHANNEL IGBT
Symbol
FM
V
Trr
Irr
Qrr
Characteristics
Diode Forward Voltage
Diode Reverse
Recover
Diode Peak Reverse
Recover
Diode Reverse
Recover
Time
Current
Charge
THERMAL RESISTANCE
Symbol
Characteristics
Test Conditions
IF=8.0A
F
I
=8.0A, VR=200V
-di/dt=200A/uS
Min
Tc =25°C
Tc =100°C
Tc =25°C
Tc =100°C
Tc =25°C
Tc =100°C
Tc =25°C
Tc =100°C
Typ
Min
Min
-
-
-
-
-
-
-
-
Typ
Max
1.4
1.3
37
55
3.5
4.5
65
124
Max
1.7
-
55
-
5.0
-
138
-
Units
V
nS
A
nC
Units
RθJC
JC
R
θ
JA
R
θ
CS
R
θ
Junction-to-Case (IGBT
Junction-to-Case (DIODE
Junction-to-Ambient
Case-to-Sink
-
-
-
-
-
-
-
0.24
2.0
3.5
40
-
°C/W
°C/W
°C/W
°C/W