Fairchild Semiconductor SGH10N120RUF Datasheet

SGH10N120RUF

IGBT

SGH10N120RUF

Short Circuit Rated IGBT

General Description

Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G

C

E

Absolute Maximum Ratings T

Symbol Description SGH10N120RUF Units

V

CES

V

GES

I

C

I

CM (1)

T

SC

P

D

Operating Junction Temperature -55 to +150 °C

T

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1200 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C16 A
Collector Current @ T
Pulsed Collector Current 30 A
Short Circuit Withstand Time @ TC = 100°C10 µs
Maximum Power Dissipation @ TC = 25°C 125 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering

Purposes, 1/8” from case for 5 seconds

TO-3P

= 25°C unless otherwise noted

C

Features

• Short circuit rated 10µs @ TC = 100°C, VGE = 15V

• High speed switching

• Low saturation voltage : V

• High input impedance

C

C

G

G

E

E

= 100°C10 A

C

= 100°C50 W

C

300 °C

= 2.3 V @ IC = 10A

CE(sat)

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

©2002 Fairchild Semiconductor Corporation SGH10N120RUF Rev. B2

Thermal Resistance, Junction-to-Case -- 1.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGH10N120RUF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 1 mA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 10mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 10A

C

= 16A

C

VGE = 15V

,

VGE = 15V

GE

3.5 5.5 7.5 V

-- 2.3 3.0 V

-- 2.8 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 75 -- pF
Reverse Transfer Capacitance -- 30 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 950 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1.3 1.85 mJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1.75 2.54 mJ

E

ts

T

sc

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 20 -- ns
Rise Time -- 60 -- ns
Turn-Off Delay Time -- 60 110 ns
Fall Time -- 150 300 ns
Turn-On Switching Loss -- 0.65 -- mJ

V

= 600 V, IC = 10A,

CC

R

= 25Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 0. 6 5 -- mJ

Turn-On Delay Time

-- 20 -- ns
Rise Time -- 70 -- ns
Turn-Off Delay Time -- 80 150 ns
Fall Time -- 200 400 ns
Turn-On Switching Loss -- 0.75 -- mJ

= 600 V, IC = 10A,

V

CC

= 25Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 1. 0 0 -- mJ

Short Circuit Withstand Time
Total Gate Charge

Gate-Emitter Charge -- 6 9 nC
Gate-Collector Charge -- 25 40 nC

VCC = 600 V, V

@

TC = 100°C

= 600 V, IC = 10A,

V

CE

V

= 15V

GE

= 15V

GE

10 -- -- µs

-- 50 75 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

©2002 Fairchild Semiconductor Corporation

SGH10N120RUF Rev. B2

SGH10N120RUF

70

Common Emitter

℃

= 25

T

C

60

50

[A]

C

40

30

20

Collector Current, I

10

0

0246810

20V

17V

15V

12V

VGE = 10V

Collector - E mitter Voltage , VCE [V]

50

Common Emitter

= 15V

V

GE

= 25℃

T

C

40

TC = 125℃

[A]

C

30

20

Collector Current, I

10

0

0246810

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

3.4
Common Emitter

= 15V

V

3.2

GE

[V]

3.0

CE

2.8

2.6

2.4

2.2

Collector - Emitter Voltage, V

2.0

1.8

25 50 75 100 125 150

Case Temperature, TC [℃]

16A

IC = 10A

20

10

VCC = 600V
Load Current : peak of square wave

Load Current [A]

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 25W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 3. Satur ation Voltage vs. Case
Temperature at Variant Current Level

20

Common Emitter

℃

= 25

T

C

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 12 16 20

20A

10A

IC = 5A

Gate - Em itter Voltage , VGE [V]

Fig 5. Saturation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 4. Load Current vs. Frequency

20

Common Emitter

℃

= 125

T

C

16

[V]

CE

12

8

4

Collector - Em itte r Vo lta g e , V

0

0 4 8 12 16 20

Gate - Emitter Voltage, VGE [V]

Fig 6. S at uration Voltage vs. VGE

GE

20A

10A

IC = 5A

SGH10N120RUF Rev. B2