Fairchild Semiconductor SGF80N60UF Datasheet

October 2001

SGF80N60UF

IGBT

SGF80N60UF

Ultra-Fast IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TO-3PF

G

C

E

Absolute Maximum Ratings T

Symbol Description SGF80N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C80 A
Collector Current @ T
Pulsed Collector Current 220 A
Maximum Power Dissipation @ TC = 25°C110 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

TO-3PF

= 25°C unless otherwise noted

C

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

C

C

G

G

E

E

= 100°C40 A

C

= 100°C45 W

C

300 °C

= 2.1 V @ IC = 40A

CE(sat)

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case -- 1.1 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W

SGF80N60UF Rev. A

SGF80N60UF

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 40mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 40A

C

= 80A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 350 -- pF
Reverse Transfer Capacitance -- 100 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 2790 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 1160 1500 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1580 2000 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 50 -- ns
Turn-Off Delay Time -- 90 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 570 -- uJ

V

= 300 V, IC = 40A,

CC

R

= 5Ω, V

G

GE

= 15V,

Inductive Load, T

= 25°C

C

Turn-Off Switching Loss -- 59 0 -- uJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 55 -- ns
Turn-Off Delay Time -- 150 200 ns
Fall Time -- 160 250 ns
Turn-On Switching Loss -- 630 -- uJ

= 300 V, IC = 40A,

V

CC

R

G

= 5Ω, V

GE

= 15V,

Inductive Load, T

= 125°C

C

Turn-Off Switching Loss -- 940 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 25 40 nC
Gate-Collector Charge -- 60 90 nC

= 300 V, IC = 40A,

V

CE

V

GE

= 15V

-- 175 250 nC

Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

SGF80N60UF

250

Common Emitter

℃

TC = 25

200

[A]

C

150

100

Collector Current, I

50

0

02468

20V

15V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Comm on Emitt er
V

= 15V

[V]

CE

Collector - Emitter Voltage, V

GE

3

2

1

0

0306090120150

80A

40A

IC = 20A

Case Temperature, TC [℃]

12V

120

Commo n Emitter
V

= 15V

GE

T

= 25℃

C

100

T

= 125℃

C

80

[A]

C

60

40

Collector Current, I

20

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

50

40

30

20

Load Current [A]

10

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 26W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [Khz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequ ency

Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 20A

40A

80A

Common Emitter

℃

T

= 25

C

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGF80N60UF Rev. A

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 20A

048121620

40A

80A

Common Emitter

℃

T

= 125

C

Gate - Emitter Voltage, VGE [V]