Fairchild Semiconductor SGF40N60UF Datasheet
October 2001
SGF40N60UF
IGBT
SGF40N60UF
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF
series provides low conduction and switching losses.
UF series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G
C
E
Absolute Maximum Ratings T
Symbol Description SGF40N60UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C40 A
Collector Current @ T
Pulsed Collector Current 160 A
Maximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
TO-3PF
= 25°C unless otherwise noted
C
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
C
C
G
G
E
E
= 100°C20 A
C
= 100°C40 W
C
300 °C
= 2.1 V @ IC = 20A
CE(sat)
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Case -- 1.2 °C/W
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGF40N60UF Rev. A
SGF40N60UF
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 20mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 20A
C
= 40A
C
VGE = 15V
,
VGE = 15V
GE
3.5 4.5 6.5 V
-- 2.1 2.6 V
-- 2.6 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 170 -- pF
Reverse Transfer Capacitance -- 50 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 1430 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 360 600 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 740 1200 uJ
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 65 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 160 -- uJ
V
= 300 V, IC = 20A,
CC
R
= 10Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 20 0 -- uJ
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 37 -- ns
Turn-Off Delay Time -- 110 200 ns
Fall Time -- 144 250 ns
Turn-On Switching Loss -- 310 -- uJ
= 300 V, IC = 20A,
V
CC
= 10Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 430 -- uJ
Total Gate Charge
Gate-Emitter Charge -- 20 30 nC
Gate-Collector Charge -- 25 40 nC
= 300 V, IC = 20A,
V
CE
V
GE
= 15V
-- 97 150 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
SGF40N60UF
160
Common Emitter
℃
TC = 25
120
[A]
C
80
40
Collector Current, I
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
80
Common Emitter
V
= 15V
GE
70
T
= 25℃
C
T
= 125℃
C
60
[A]
C
50
40
30
Collector Current, I
20
10
0
0.5 1 10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
[V]
CE
4
Common Emitter
V
= 15V
GE
3
2
40A
20A
Characteristics
30
25
20
15
VCC = 300V
Load Current : peak of square wave
IC = 10A
1
Collector - Emitter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
[V]
CE
12
8
4
Collector - Emit t er Voltage, V
0
048121620
IC = 10A
40A
20A
Gate - Emitter Voltage, VGE [V]
Common Emitter
℃
T
= 25
C
10
Load Current [A]
5
Duty cycle : 50%
℃
= 100
T
C
Power Dissipation = 24W
0
0.1 1 10 100 1000
Frequency [KHz]
Fig 4. Load Current vs. Frequ ency
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 10A
0 4 8 12 16 20
20A
Gate - Emitter Voltage, VGE [V]
40A
Common Emitter
= 125
T
C
℃
Fig 5. Satur ation Voltage vs. V
©2001 Fairchild Semiconductor Corporation SGF40N60UF Rev. A
Fig 6. Saturation Voltage vs. VGE
GE
Loading...