Fairchild Semiconductor SGF23N60UFD Datasheet
June 2001
SGF23N60UFD
IGBT
SGF23N60UFD
Ultra-Fast IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD
series provides low conduction and switching losses.
UFD series is designed for the applications such as motor
control and general inverters where High Speed Switching
is required.
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
TO-3PF
G
C
E
Absolute Maximum Ratings T
Symbol Description SGF23N60UFD Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C23 A
Collector Current @ T
Pulsed Collector Current 92 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
TO-3PF
= 25°C unless otherwise noted
C
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• CO-PAK, IGBT with FRD : t
G
G
= 100°C12 A
C
= 100°C30 W
C
300 °C
= 2.1 V @ IC = 12A
CE(sat)
= 42ns (typ.)
rr
C
C
E
E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 1.6 °C/W
θJC
R
(DIODE) Thermal Resistance, Junction-to-Case -- 3.0 °C/W
θJC
R
θJA
©2001 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
SGF23N60UFD Rev. A
SGF23N60UFD
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 12mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 12A
C
= 23A
C
VGE = 15V
,
VGE = 15V
GE
3.5 4.5 6.5 V
-- 2.1 2.6 V
-- 2.6 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 100 -- pF
Reverse Transfer Capacitance -- 25 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 720 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 250 400 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 525 800 uJ
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 17 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 115 -- uJ
V
= 300 V, IC = 12A,
CC
R
= 23Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 135 -- uJ
Turn-On Delay Time
-- 23 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 100 20 0 ns
Fall Time -- 220 250 ns
Turn-On Switching Loss -- 205 -- uJ
= 300 V, IC = 12A,
V
CC
= 23Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 320 -- uJ
Total Gate Charge
Gate-Emitter Charge -- 11 17 nC
Gate-Collector Charge -- 14 22 nC
= 300 V, IC = 12A,
V
CE
V
GE
= 15V
-- 49 80 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
T
= 25°C
C
= 100°C
T
C
TC = 25°C
= 100°C
T
C
T
= 25°C
C
= 100°C
T
C
T
= 25°C
C
= 100°C
T
C
V
FM
t
rr
I
rr
Q
rr
©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A
Diode Forward Voltage IF = 12A
Diode Reverse Recovery Time
I
Diode Peak Reverse Recovery
Current
= 12A,
F
di/dt = 200A/us
Diode Reverse Recovery Charge
-- 1.4 1.7
-- 1.3 --
-- 42 60
-- 80 --
-- 3.5 6.0
-- 5.6 --
-- 80 180
-- 220 --
V
ns
A
nC
SGF23N60UFD
100
Common Emitter
℃
TC = 25
80
[A]
C
60
40
Collector Cu rrent, I
20
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
50
Common Emitter
V
= 15V
GE
T
= 25℃
C
40
T
= 125℃
C
[A]
C
30
20
Collector Current, I
10
0
0.5 1 10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
[V]
CE
4
Common Emitter
V
= 15V
GE
3
2
24A
12A
Characteristics
18
15
12
9
VCC = 300V
Load Current : peak of square wave
IC = 6A
1
Collector - Emitter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
IC = 6A
12A
24A
Gate - Emitter Voltage, VGE [V]
Common Emitter
℃
T
= 25
C
6
Load Current [A]
3
Duty cycle : 50%
℃
= 100
T
C
Power Dissipation = 16W
0
0.1 1 10 100 1000
Frequency [KHz]
Fig 4. Load Current vs. Frequ ency
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 6A
0 4 8 12 16 20
12A
Gate - Emitter Voltage, VGE [V]
24A
Common E mitter
T
= 125
C
℃
Fig 5. Satur ation Voltage vs. V
©2001 Fairchild Semiconductor Corporation SGF23N60UFD Rev. A
Fig 6. Saturation Voltage vs. VGE
GE
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