Fairchild Semiconductor SGF15N90D Datasheet

SGF15N90D

SGF15N90D

General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.

Applications

Home appliances, induction heaters, induction hea 1 ting JARs, and microwave ovens.

TO-3PF

C

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• Built-in fast recovery diode

G

G

= 2.0 V @ IC = 15A

CE(sat)

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGF15N90D Units

V

CES

V

GES

I

C

I

CM (1)

I

F

P

D

Operating Junction Temperature -55 to +150 °C

T

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 900 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C15 A
Collector Current @ T
Pulsed Collector Current 30 A
Diode Continuous Forward Current @ TC = 100°C12 A
M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C83 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering

purposes,1/8” from case for 5 seconds

= 25°C unless otherwise noted

C

= 100°C12 A

C

= 100°C33 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 1.5 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 2.86 °C/W

R

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 40 °C/W

©2002 Fairchild Semiconductor Corporation SGF15N90D Rev. A1

SGF15N90D

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
I

CES

I

GES

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA 900 -- -- V
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

, VGE = 0V -- -- 1.0 mA

CES

, VCE = 0V -- -- ± 500 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 15mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I

C

I

C

= 2.5A
= 15A

VGE = 15V

,

VGE = 15V

GE

4.0 5.0 7.0 V

-- 1.4 1.8 V

-- 2.0 2.7 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 80 -- pF
Reverse Transfer Capacitance -- 50 -- pF

=10V, VGE = 0V,

V

CE

f = 1MHz

-- 1500 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
ge
gc

Turn-On Delay Time
Rise Time -- 180 280 ns
Turn-Off Delay Time -- 150 230 ns
Fall Time -- 200 320 ns
Total Gate Charge
Gate-Emitter Charge -- 15 -- nC
Gate-Collector Charge -- 20 -- nC

= 600 V, IC = 15A,

V

CC

= 51Ω, V

R

G

Resistive Load, T

= 600 V, IC = 15A,

V

CE

V

GE

= 15V

GE

= 15V,

25°C

C

-- 50 80 ns

-- 60 80 nC

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

= 4A -- 1.1 1.6 V

V

FM

t

rr

I

R

Diode Forward Voltage
Diode Reverse Recovery Time IF = 15A, di/dt = 20 A/µs

Instantaneous Reverse Current V

F

I

= 15A -- 1.45 1.7 V

F

RRM

= 900V -- 0.03 1.2 uA

-- 0.8 1.2 us

©2002 Fairchild Semiconductor Corporation

SGF15N90D Rev. A1

SGF15N90D

50

Common Emitter

℃

= 25

T

C

40

[A]

C

30

20

Collecto r Current, I

10

0

012345

20V

15V 10V

9V

7V

VGE = 6V

Collector-Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

3.0

[V]

2.5

CE

2.0

1.5

Collector-Emitter Voltage , V

1.0

-50 0 50 100 150

Case Temperature, TC [℃]

VGE = 15V

20A

15A

10A

IC = 5A

50

Common Emitter

= 15V

V

GE

━━

= 25℃

T

C

40

T

= 125℃ ------

C

[A]

8V

C

30

20

Collector Current, I

10

0

012345

Collector-Emitter Voltage,VCE [V]

Fig 2. Typical Saturation V oltage Characteristics

10

8

[V]

CE

6

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

15A
10A

20A

IC = 5A

Common Emitter

℃

= -40

T

C

Gate-Emitter Voltage, VGE [V]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

10

8

[V]

CE

6

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

IC = 5A

15A

10A

20A

Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Common Emitter

℃

= 25

T

C

GE

Fig 4. Saturation Voltage vs. V

10

8

[V]

CE

6

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

IC = 5A

15A

10A
20A

GE

Common Emitter

= 125

T

C

Gate-Emitter Voltage, VGE [V]

Fig 6. Saturation Voltage vs. V

GE

℃

SGF15N90D Rev. A1