Fairchild Semiconductor SFW9614 Datasheet

SFW/I9614

BV

DSS

= -250 V

R

DS(on)

= 4.0 Ω

ID= -1.6 A

-250

-1.6

-1.0

-6.5

112

-1.6

2.0

-4.8

3.1 20

0.16

- 55 to +150

300

6.25 40

62.5

--

30

+

_

ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA(Max.) @ V

DS

= -250V

ν Low R

DS(ON)

: 3.5 Ω (Typ.)

Advanced Power MOSFET

Thermal Resistance

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

R

θJC

R

θJA

R

θJA

o

C/W

Characteristic Max. UnitsSymbol Typ.

FEATURES

D2-PAK

1. Gate 2. Drain 3. Source

1

3

2

1

2

3

I2-PAK

*

When mounted on the mi nimum pad size recommended (PCB Mount).

Absolute Maximum Ratings

Drain-to-Source Voltage Continuous Drain Current (T

C

=25oC)

Continuous Drain Current (T

C

=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

A

=25oC)

Total Power Dissipation (T

C

=25oC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds

Characteristic Value UnitsSymbol

I

DM

V

GS

E

AS

I

AR

E

AR

dv/dt

P

D

I

D

T

J

, T

STG

T

L

A V

mJ

A

mJ

V/ns

W W

W/

o

C

A

o

C

V

DSS

V

*

O

1

O

2

O

3

O

1

O

1

2001 Fairchild Semiconductor Corporation

Rev. B1

SFW/I9614

-250

--

-2.0

--

-0.21

--

35 13 10 18 24 11

9

2.0

4.6

--

-4.0

-100 100

-10

-100

4.0

--

295

55 20 30 45 60 30 11

--

1.0

225

--

130

0.61

-1.6

-6.5

-4.0

--

Notes ;

Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature L=70mH, I

AS

=-1.6A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

I

SD

-1.6A, di/dt 250A/µs, VDDBV

DSS

, Starting TJ =25oC Pulse Test : Pulse Width = 250µs, Duty Cycle 2% Essentially Independent of Operating Temperature

<

_

<

_

<

_

<

_

O

1

O

2

O

3

O

4

O

5

P-CHANNEL

POWER MOSFET

Electrical Characteristics

(TC=25oC unless otherwise specified)

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

CharacteristicSymbol

Max. UnitsTyp.Min. Test Condition

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

BV

DSS

∆BV/∆T

J

V

GS(th)

R

DS(on)

I

GSS

I

DSS

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

--

V

GS

=0V,ID=-250µA

I

D

=-250µA See Fig 7

V

DS

=-5V,ID=-250µA

V

GS

=-30V

V

GS

=30V VDS=-250V V

DS

=-200V,TC=125oC

V

GS

=-10V,ID=0.8A V

DS

=-40V,ID=-0.8A

VDD=-125V,ID=-1.6A, R

G

=24Ω

See Fig 13

V

DS

=-200V,VGS=-10V, I

D

=-1.6A

See Fig 6 & Fig 12

Drain-to-Source Leakage Current

VGS=0V,VDS=-25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

Q

rr

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

--

A

V ns µC

Integral reverse pn-diode in the MOSFET T

J

=25oC,IS=-1.6A,VGS=0V

T

J

=25oC,IF=-1.6A

di

F

/dt=100A/µs

O

4

O

4

O

5

O

4

O

4

O

5

O

1

O

4

O

4

SFW/I9614

0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0

10

-2

10

-1

10

0

150 oC

25 oC

@ Notes :

1. V

GS

= 0 V

2. 250

µ

s Pulse Test

-I

DR

, Reverse Drain Cu rrent [A]

-VSD , Source-Drain Vol tage [ V]

0246810

0

2

4

6

8

10

12

VDS = -200 V

VDS = -125 V

VDS = -50 V

@ Notes : ID = -1.6 A

-V

GS

, Gate-Source Volt age [V]

QG , Total Gate Charg e [nC]

0123456

0

2

4

6

8

10

12

@ Note : TJ = 25 oC

VGS = -20 V

VGS = -10 V

R

DS(on)

, [

Ω

]

Drain-Source On -Resi sta nce

-ID , Drain Current [A]

246810

10

-2

10

-1

10

0

25 oC

150 oC

- 55 oC

@ Notes :

1. V

GS

= 0 V

2. V

DS

= -40 V

3. 250

µ

s Pulse Test

-I

D

, Drain Current [A]

-VGS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

V

GS

Top : -1 5 V

-10 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V Botto m : -4.5 V

-I

D

, Drain Current [A]

-VDS , Drain-Source Volt age [ V]

10

0

10

1

0

100

200

300

400

C

iss

= Cgs+ Cgd ( Cds= shorted )

C

oss

= Cds+ C

gd

C

rss

= C

gd

@ Notes :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-VDS , Drain-Source Voltage [V]

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current