Fairchild Semiconductor SFU9214, SFR9214 Datasheet

Advanced Power MOSFET

SFR/U9214

FEATURES

ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA(Max.) @ V ν Lower R

: 3.15 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T

=25oC)

C

Continuous Drain Current (TC=100oC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T Total Power Dissipation (T

=25oC)

A

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

= -250V

DS

BV R

DS(on)

DSS

= -250 V

= 4.0 Ω

ID= -1.53 A

D-PAK

1

3

1. Gate 2. Drain 3. Source

-250

-1.53

-0.97

1

O

2

O

1

O

1

O

3

O

*

-6.1

+

_

30

110

-1.53

1.9

-4.8

2.5 19

0.15

- 55 to +150

300

I-PAK

2

1

2

3

V A A

V

mJ

A

mJ

V/ns

W W

o

W/

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJC

R

θJA

R

θJA

When mounted on the mi nimum pad size recommended (PCB Mount).

*

2001 Fairchild Semiconductor Corporation

Junction-to-Case Junction-to-Ambient Junction-to-Ambient

*

--

6.58 50

110

o

C/W

Rev. B1

SFR/U9214

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “Miller “) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-250

--

-2.0

--

-0.21

--

1.0

225

35 13 10 18 24 11

9

2.0

4.6

--

-4.0

-100 100

-10

-100

4.0

--

295

55 20 30 45 60 30 11

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-30V

GS

V

=30V

GS

VDS=-250V V

=-200V,TC=125oC

DS

=-10V,ID=-0.77A

V

GS

=-40V,ID=-0.77A

V

DS

VGS=0V,VDS=-25V,f =1MHz

VDD=-125V,ID=-1.6A, R

=24Ω

G

See Fig 13

V

=-200V,VGS=-10V,

DS

I

=-1.6A

D

See Fig 6 & Fig 12

See Fig 5

O

4

O

4

O

5

4

O

5

4

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Wi dt h Limi ted by Maximum Junction Temperature

1

O

2

L=75mH, I

O

3

I

SD

O

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-1.53A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

-1.6A, di/dt 250A/µs, VDDBV

_

<

, Starting TJ =25oC

_

<

DSS

-1.53

--

1

--

O

4

--

O

--

_

<

--

130

0.61

-6.1

-4.0

--

Integral reverse pn-diode

A

in the MOSFET

V

T

=25oC,IS=-1.53A,VGS=0V

J

ns

T

=25oC,IF=-1.6A

J

µC

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : -1 5 V

-10 V

-8.0 V

-7.0 V

-6.0 V

0

-5.5 V

10

-5.0 V Botto m : -4.5 V

-1

10

, Drain Current [A]

D

-I

-2

10

-1

10

-VDS , Drain-Source Volt age [ V]

12

10

]

8

Ω

, [

6

DS(on)

R

4

VGS = -10 V

2

Drain-Source On -Resi sta nce

0

0123456

-ID , Drain Current [A]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

VGS = -20 V

@ Note : TJ = 25 oC

SFR/U9214

0

10

150 oC

-1

10

25 oC

@ Notes :

, Drain Current [A]

D

- 55 oC

-I

-2

1

10

246810

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

0

10

-1

10

, Reverse Drain Cu rrent [A]

DR

-2

-I

10

0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0

150 oC

25 oC

-VSD , Source-Drain Vol tage [ V]

1. V

GS

2. V

DS

3. 250

@ Notes :

1. V

GS

2. 250

= 0 V = -40 V

s Pulse Test

µ

= 0 V

µ

s Pulse Test

400

C

300

200

Capacitance [pF]

100

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

-VDS , Drain-Source Voltage [V]

12

VDS = -50 V

10

8

VDS = -125 V VDS = -200 V

6

4

2

, Gate-Source Volta ge [V]

GS

0

0246810

-V QG , Total Gate Charge [nC]

@ Notes : ID = -1.6 A

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage