Fairchild Semiconductor SFS9634 Datasheet

Advanced Power MOSFET

SFS9634

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Low R

: 0.876 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O

O O O O

BV R I

= -250 V

DSS

= 1.3 Ω

DS(on)

= -3.4 A

D

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

-250

-3.4

-2.6

1

2

1 1

3

-14

+

_

145

-3.4

3.3

-4.8

30

33

0.26

- 55 to +150

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

Symbol Typ.

R

θJC

R

θJA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

3.79

62.5

o

C/W

Rev. B

SFS9634

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol

BV ∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “ Miller “ ) Charge

gd

=25oC unless otherwise specified)

C

Max. UnitsTyp.Min. Test Condition

V

-250

--

-2.0

--

-0.22

--

3.2 750 110

45 13 20 40 16 29

5.4

15.5

-100

--

-4.0

100

-10

1.3

-975 165

65 35 50 90 40 37

--

V

GS

o

I

V/

nA

µA

nC

=-250µA See Fig 7

C

D

V

DS

V

GS

V

GS

V

DS

V

DS

V

Ω

GS

V

Ω

DS

V

GS

pF

ns

See Fig 5

V

DD

=12 Ω

R

G

V

DS

I

=-5.0A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA =-30V =30V =-250V =-200V,TC=125oC

=-10V,ID=-1.7A =-40V,ID=-1.7A

O O

4

=0V,VDS=-25V,f =1MHz

=-125V,ID=-5.0A,

See Fig 13

O

4

O

=-200V,VGS=-10V,

O4O

5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=20mH, I

O

3

I

O

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

4

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-3.4A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

-5.0A, di/dt 400A/µs, V

<

SD

_

<

--

170

1.17

-3.4

-14

-5.0

--

A

V ns µC

--

1

--

O

4

--

O

--

_

BV

<

DD

, Starting TJ =25oC

DSS

_

<

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-3.4A,VGS=0V

J

T

=25oC,IF=-5.0A

J

/dt=100A/µs

di

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

1

10

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

3.0

2.5

]

Ω

2.0

, [

DS(on)

R

1.5

V

GS

1.0

Drain-Source On-Resistance

0.5

0.0 0 3 6 9 12 15 18 21

-ID , Drain Current [A]

= -10 V

0

10

@ Notes :

1. 250

2. T

= 25 oC

C

VGS = -20 V

s Pulse Test

µ

@ Note : TJ = 25 oC

SFS9634

1

10

0

10

, Drain Current [A]

D

-I

-1

1

10

, Reverse Drain Current [A]

DR

-I

-1

10

o

150

C

25 oC

- 55

@ Notes :

= 0 V

1. V

GS

2. V

= -40 V

DS

3. 250

s Pulse Test

o

C

µ

2 4 6 8 10

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

0

150 oC

@ Notes :

= 0 V

o

C

25

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

-VSD , Source-Drain Voltage [V]

1. V

2. 250

GS

s Pulse Test

µ

1500

C

iss

1000

C

oss

500

C

Capacitance [pF]

rss

0

10

-VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= -50 V

V

10

DS

= -125 V

V

DS

VDS = -200 V

5

, Gate-Source Voltage [V]

GS

-V

0

0 5 10 15 20 25 30

@ Notes : ID =-5.0 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor SFS9634 Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual