Fairchild Semiconductor SFS9610 Datasheet

Advanced Power MOSFET

SFS9610

FEATURES

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = -200V
Low R

: 2.25 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T

=25oC)

C

Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds

1/8”

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O
O

O
O
O

BV
R
I

= -200 V

DSS

= 3.0

DS(on)

= -1.4 A

D

Ω

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

-200

-1.4

-0.9

1

2

1
1

3

-6.0

+

_

-1.4

-5.0

30

91

1.3

13

0.1

- 55 to +150

300

V
A
A

V

mJ

A

mJ

V/ns

W

W/

o

o

C

C

Thermal Resistance

Symbol Typ.

R

θJC

R

θJA

©1999 Fairchi ld Semiconduc tor Corpor ation

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

--

9.62

62.5

o

C/W

Rev. B

SFS9610

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol

BV
∆BV/∆T
V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “ Miller “ ) Charge

gd

=25oC unless otherwise specified)

C

Max. UnitsTyp.Min. Test Condition

V

-200

--

-2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.2

--

--

--

--

--

--

1.0

220

45
16
10
20
27
12

9

1.8

4.8

-100

-100

--

--

-4.0

100

-10

3.0

--

285

65
25
30
50
65
35
11

--

--

V

GS

o

I

V/

nA

µA

nC

=-250µA See Fig 7

C

D

V

V

DS

V

GS

V

GS

V

DS

V

DS

V

Ω

GS

V

Ω

DS

V

GS

pF

ns

See Fig 5

V

DD

=18

R

G

V

DS

I

=-1.75A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA
=-30V
=30V
=-200V
=-160V,TC=125oC

=-10V,ID=-0.7A
=-40V,ID=-0.7A

O
O

4

4

=0V,VDS=-25V,f =1MHz

=-100V,ID=-1.75A,

Ω

See Fig 13

=-160V,VGS=-10V,

O

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

2

L=70mH, I

O

3

I

O

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-1.4A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-1.75A, di/dt 250A/µs, VDDBV

SD

_

<

_

<

DSS

--

1

--

O

4

--

O

--

--

, Starting TJ =25oC

_

<

--

--

--

110

0.42

-1.4

-6.0

-4.0

--

--

A

V
ns
µC

Integral reverse pn-diode
in the MOSFET
T

=25oC,IS=-1.4A,VGS=0V

J

T

=25oC,IF=-1.75A

J

/dt=100A/µs

di

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

0

10

Bottom : - 4.5 V

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

10

8

]

Ω

, [

6

DS(on)

R

4

Drain-Source On-Resistance

2

0

0 1 2 3 4 5 6 7

-ID , Drain Current [A]

V

GS

10

= -10 V

@ Notes :

1. 250

2. T

0

VGS = -20 V

s Pulse Test

µ

= 25 oC

C

@ Note : TJ = 25 oC

SFS9610

0

10

o

150

C

o

25

, Drain Current [A]

D

-I

C

- 55

-1

1

10

10

2 4 6 8 10

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

0

10

150 oC

, Reverse Drain Current [A]

DR

-I

-1

10

0.5 1.0 1.5 2.0 2.5 3.0

o

25

C

-VSD , Source-Drain Voltage [V]

@ Notes :

= 0 V

1. V

GS

2. V

= -40 V

DS

3. 250

s Pulse Test

@ Notes :

1. V

2. 250

µ

= 0 V

GS

s Pulse Test

µ

o

C

400

C

iss

300

C

oss

200

C

Capacitance [pF]

100

rss

0

0

10

-VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= -40 V

V

10

DS

V

DS

V

DS

= -100 V
= -160 V

5

, Gate-Source Voltage [V]

GS

-V

0

0 2 4 6 8 10

@ Notes : ID =-1.75 A

QG , Total Gate Charge [nC]