Fairchild Semiconductor SFS9540 Datasheet
Advanced Power MOSFET
SFS9540
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
o
n 175
C Operating Temperature
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA(Max.) @ V
n Low R
: 0.161 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
=25oC)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
1/8”
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
= -100V
DS
O
O
O
O
O
BV
R
DS(on)
DSS
= -100 V
= 0.2
Ω
ID= -10.7 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
-100
-10.7
-8.1
1
-43
±30
2
1
1
3
534
-10.7
5.3
-6.5
53
0.35
- 55 to +175
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
o
C
C
Thermal Resistance
Symbol Typ.
R
θJC
R
θJA
Characteristic Max.
Junction-to-Case
Junction-to-Ambient
Units
--
--
2.83
62.5
o
C/W
Rev. C
SFS9540
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(＂Miller＂) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-100
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.11
--
--
--
--
--
--
8.5
1180
240
83
14
22
45
26
43
7.4
17.8
--
--
-4.0
-100
100
-10
-100
0.2
--
1535
360
125
40
55
100
60
54
--
--
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
=0V,ID=-250µA
GS
I
=-250µA See Fig 7
D
V
=-5V,ID=-250µA
DS
V
=-20V
GS
V
=20V
GS
VDS=-100V
V
=-80V,TC=150oC
DS
=-10V,ID=-5.4A
V
GS
=-40V,ID=-5.4A
V
DS
VGS=0V,VDS=-25V,f =1MHz
VDD=-50V,ID=-17A,
R
=12
G
V
=-80V,VGS=-10V,
DS
I
=-17A
D
See Fig 6 & Fig 12
See Fig 5
Ω
See Fig 13
O
O
4
O
4
O
4
5
O
4
5
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
1
O
2
L=7.0mH, I
O
3
I
O
4
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O
5
Essentially Independent of Operating Temperature
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-10.7A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
AS
_
<
-17A, di/dt 450A/µs, VDDBV
SD
_
<
_
<
DSS
--
1
--
O
4
--
O
--
--
, Starting TJ =25oC
_
<
--
--
--
135
0.7
-10.7
-43
-4.0
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-10.7A,VGS=0V
J
T
=25oC,IF=-17A
J
di
/dt=100A/µs
F
O
4
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : - 1 5 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
1
- 5.5 V
10
- 5.0 V
Bott om : - 4.5 V
0
10
, Drain Current [A]
D
-I
-1
10
-VDS , Drain-Source Voltage [V]
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
10
SFS9540
1
10
175 oC
25 oC
0
10
, Drain Current [A ]
D
-I
-1
1
10
10
246810
- 55 oC
-VGS , Gate-Source Vo ltage [V]
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= -40 V
DS
s Pulse Test
µ
0.6
0.5
]
Ω
0.4
, [
DS(on)
R
0.3
VGS = -10 V
0.2
Drain-Source On-Resistance
0.1
0.0
0 8 16 24 32 40 48 56 64
VGS = -20 V
-ID , Drain Current [A ]
2000
C
1500
1000
Capacitance [pF]
500
iss
C
oss
C
rss
0
0
10
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
1
10
-VDS , Drain-Source Voltage [V]
@ Note : TJ = 25 oC
@ Notes :
1. V
= 0 V
GS
2. f = 1 MHz
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
10
0
10
175 oC
, Reverse Drain C urrent [A]
DR
-I
-1
10
25 oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
@ Notes :
1. V
2. 250
= 0 V
GS
s Pulse Test
µ
-VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
10
5
, Gate-Source Vo ltage [V]
GS
-V
0
0 1020304050
VDS = -20 V
VDS = -50 V
VDS = -80 V
@ Notes : ID =-17 A
QG , Total Gate Char ge [nC]
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