Fairchild Semiconductor SFS9530 Datasheet

Advanced Power MOSFET

SFS9530

FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge

o

n 175

C Operating Temperature

n Extended Safe Operating Area n Lower Leakage Current : 10 µA(Max.) @ V n Low R

: 0.225 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS AS

AR

D

STG

L

= -100V

DS

O

O O O O

BV R

DS(on)

DSS

= -100 V

= 0.3 Ω

ID= -8 A

TO-220F

1

2

3

1.Gate 2. Drain 3. Source

-100

-8.0

-5.6

1

-32

±30

2

1 1

3

340

-8.0

3.9

-6.5 39

0.26

- 55 to +175

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

Symbol Typ.

R

θJC

R

θJA

Characteristic Max.

Junction-to-Case

Junction-to-Ambient

Units

--

3.85

62.5

o

C/W

Rev. C

SFS9530

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-100

--

-2.0

--

-0.1

--

4.9 800 160

60 13 22 45 25 30

5.4

12.2

--

-4.0

-100 100

-10

-100

0.3

--

1035

240

90 35 55

100

60 38

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-100V V

=-80V,TC=150oC

DS

=-10V,ID=-4.0A

V

GS

VDS=-40V,ID=-4.0A VGS=0V,VDS=-25V,f =1MHz

=-50V,ID=-10.5A,

V

DD

R

=12

G

V

=-80V,VGS=-10V,

DS

I

=-10.5A

D

See Fig 6 & Fig 12

See Fig 5

Ω

See Fig 13

O

4

O

4

O

4

5

O

4

O5O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Wi dt h Limi t ed by Maximum Junction Temperature

O

2

L=8.0mH, I

O

3

I

O

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-8.0A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-10.5A, di/dt 400A/µs, V

_

<

DD

--

1

O

4

O

_

<

BV

, Starting TJ =25oC

DSS

_

<

--

-120

--

0.53

--

-32

-4.0

--

A

V ns µC

-8.0

--

Integral reverse pn-diode in the MOSFET T

=25oC,IS=-8.0A,VGS=0V

J

T

=25oC,IF=-10.5A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

- 10 V

- 8.0 V

1

- 7.0 V

10

- 6.0 V

- 5.5 V

- 5.0 V Bott om : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFS9530

1

10

175 oC

0

10

25 oC

, Drain Current [A ]

D

-I

-1

1

10

246810

- 55 oC

-VGS , Gate-Source Vo ltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= -40 V

DS

s Pulse Test

µ

1.0

0.8

]

Ω

, [

0.6

DS(on)

R

0.4

Drain-Source On-Resistance

0.2

0.0 0 7 14 21 28 35 42

VGS = -10 V

VGS = -20 V

@ Note : TJ = 25 oC

-ID , Drain Current [A ]

1500

C

1000

500

Capacitance [pF]

iss

C

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

1

10

-VDS , Drain-Source Voltage [V]

@ Notes :

1. V

= 0 V

GS

2. f = 1 MHz

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

175 oC

@ Notes :

1. V

, Reverse Dr ain Current [A]

DR

-I

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

2. 250

= 0 V

GS

s Pulse Test

µ

-VSD , Source-Dra in Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

10

5

, Gate-Source Voltage [V]

GS

-V

0

0 5 10 15 20 25 30 35

VDS = -20 V

VDS = -50 V

VDS = -80 V

@ Notes : ID =-10.5 A

QG , Total Gate Charge [nC]

Fairchild Semiconductor SFS9530 Datasheet

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