Fairchild Semiconductor SFR9110 Datasheet
Advanced Power MOSFET
SFR/U9110
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 µA(Max.) @ V
n Lower R
: 0.912 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
=25oC)
A
=25oC)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
= -100V
DS
*
O
O
O
O
O
BV
R
DS(on)
DSS
= -100 V
= 1.2 Ω
ID= -2.8 A
D-PAK
1
3
1. Gate 2. Drain 3. Source
-100
-2.8
-2.0
1
2
1
1
3
11
±30
52
-2.8
2.0
-6.5
2.5
20
0.16
- 55 to +150
300
I-PAK
2
1
2
3
V
A
A
V
mJ
A
mJ
V/ns
W
W
o
W/
C
o
C
Thermal Resistance
Characteristic Max. UnitsSymbol Typ.
R
θJC
R
θJA
R
θJA
When mounted on the mi nimum pad size recommended (PCB Mount).
*
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
*
--
--
--
6.25
50
110
o
C/W
Rev. C
SFR/U9110
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(“Miller”) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-100
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.1
--
--
--
--
--
--
1.7
260
50
17
10
20
25
12
9
1.5
4.3
--
--
-4.0
-100
100
-10
-100
1.2
--
335
80
25
30
50
60
35
10
--
--
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
=0V,ID=-250µA
GS
I
=-250µA See Fig 7
D
V
=-5V,ID=-250µA
DS
V
=-20V
GS
V
=20V
GS
VDS=-100V
V
=-80V,TC=125oC
DS
=-10V,ID=-1.4A
V
GS
VDS=-40V,ID=-1.4A
VGS=0V,VDS=-25V,f =1MHz
=-50V,ID=-3.6A,
V
DD
R
=24
G
See Fig 13
V
=-80V,VGS=-10V,
DS
I
=-3.6A
D
See Fig 6 & Fig 12
See Fig 5
Ω
O
4
O
4
O
4
5
O
4
O5O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
1
Repetitive Rating : Pulse Wi dt h Limi t ed by Maximum Junction Temperature
O
2
L=10.0mH, I
O
3
I
O
SD
4
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O
5
Essentially Independent of Operating Temperature
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-2.8A, VDD=-25V, RG=27Ω*, Starting TJ =25oC
AS
_
<
-3.6A, di/dt 300A/µs, V
_
<
DD
--
1
O
4
O
_
<
BV
, Starting TJ =25oC
DSS
_
<
--
--
--
-100
--
0.35
--
-11
-3.8
--
--
A
V
ns
µC
-2.8
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-2.8A,VGS=0V
J
T
=25oC,IF=-3.6A
J
di
/dt=100A/µs
F
O
4
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
1
V
GS
Top : - 1 5 V
- 1 0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bo tto m : - 4 .5 V
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
-1
0
10
10
-VDS , Drain-Source Voltage [V]
VGS = -10 V
VGS = -20 V
@ Note : TJ = 25 oC
02468101214
-ID , Drain Current [A ]
, Drain Current [A ]
-I
]
Ω
, [
DS(on)
R
10
0
10
D
-1
10
10
5
4
3
2
Drain-Source On-Resistance
1
0
SFR/U9110
1
10
0
10
, Drain Current [A ]
D
-I
-1
1
10
10
10
, Reverse Drain C urrent [A]
DR
-I
-1
10
150 oC
25 oC
- 55 oC
@ Notes :
1. V
2. V
3. 250
= 0 V
GS
= -40 V
DS
s Pulse Test
µ
246810
-VGS , Gate-Source Vo ltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
1
0
150 oC
@ Notes :
= 0 V
1. V
25 oC
2. 250
GS
s Pulse Test
µ
0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0
-VSD , Source-Drain Voltage [V]
500
400
C
iss
300
200
C
Capacitance [pF]
100
oss
C
rss
0
0
10
-VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
2. f = 1 MHz
1
10
GS
= 0 V
10
VDS = -20 V
VDS = -50 V
VDS = -80 V
5
, Gate-Source Vo ltage [V]
GS
-V
0
0246810
QG , Total Gate Char ge [nC]
@ Notes : ID =-3.6 A
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
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