Fairchild Semiconductor SFP9640L Datasheet

Advanced Power MOSFET

SFP9640L

FEATURES

❑ Avalanche Rugged Technology
❑ Rugged Gate Oxide Technology
❑ Lower Input Capacitances
❑ Improved Gate Charge
❑ Extended Safe Operating Area
❑ Lower Leakage Current : -10uA (Max.) @ V
❑ Lower R

: 0.383 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds

T

V

DSS

I

I

DM

V
E

I

AR

E

dv/dt

P

, T

J

T

D

GS
AS

AR

D

STG

L

= -200V

DS

=25℃)

C

=100℃)

C

①

②

①

①

③

BV

DSS

R

DS(on)

ID= -11 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

-200

-11

-7.5

-44

±20

806

-11

9.8

-5.0
98

0.78

- 55 to +150

300

= -200 V

= 0.5Ω

V
A
A

V

mJ

A

mJ

V/ns

W

W/℃

℃

Thermal Resistance

R

θJC

R

θCS

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

1.27

--

62.5

℃/W

Rev. A

SFP9640L

N-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

ΔBV/ΔT

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(＂Miller＂) Charge

gd

(TC=25℃unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-200

--

-1.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.16

--

--

--

--

--

--

5.47

1220

207

81
16
23
54
19
46

9.2

22.9

--

--

-2.0

-100
100

-10

-100

0.5

--

1585

310
120

40
55

115

50
59

--

--

V

V/℃

V

nA

μA

Ω

S

pF

ns

nC

=0V,ID=-250μA

GS

I

=-250μA See Fig 7

D

V

=-5V,ID=-250μA

DS

V

=-20V

GS

V

=20V

GS

VDS=-200V
V

=-160V,TC=125℃

DS

=-5V,ID=-5.5A

V

GS

VDS=-40V,ID=-5.5A
VGS=0V,VDS=-25V,f =1MHz

VDD=-100V,ID=-11A,
R

=4.6Ω

G

VDS=-160V,VGS=-5V,
I

=-11A

D

See Fig 6 & Fig 12

See Fig 5

See Fig 13

④

④

④⑤

④⑤

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=3mH, I
③ I

④ Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2%
⑤ Essentially Independent of Operating Temperature

Continuous Source Current

S

Pulsed-Source Current ①
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-11A, VDD=-50V, RG=27Ω, Starting TJ =25℃

AS

≤-11A, di/dt≤100A/μs, VDD≤BV

SD

④

, Starting TJ =25℃

DSS

--

--

--

--

-­205

--

1.45

--

-44

-5.0

--

--

A

V

ns

μC

-11

--

Integral reverse pn-diode
in the MOSFET
T

=25℃,IS=-11A,VGS=0V

J

T

=25℃,IF=-11A

J

di

/dt=100A/μs

F

④

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

To p : 1 5 V
1 0 V

1

8 .0 V

10

7 .0 V
6 .0 V
5 .5 V
5 .0 V
Bo ttom : 4.5 V

0

10

, Drain Current [ A]

D

I

-1

10

-1

10

VDS , Drain-Source Vol tage [V]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

SFP9640L

1

10

150 oC

0

10

25 oC

, Drain Current [A]

D

-I

-1

1

10

10

246810

- 55 oC

-VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 30 V

DS

s Pulse Test

µ

1.0

0.8

]

Ω

0.6

VGS = -5 V

, [

DS(on)

0.4

R

Drain-Source On-Res istance

0.2

VGS =-10 V

@ Note : TJ = 25 oC

0.0
0 5 10 15 20 25 30

ID , Drain Current [ A]

Capacitance [pF]

4000

3000

2000

1000

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

C

iss

@ Notes :

1

10

1. V

2. f = 1 MHz

C

oss

C

rss

-VDS , Drain-Source Voltag e [V]

GS

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

150 oC

, Reverse Drain Curre nt [A]

DR

-I

-1

10

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

25 oC

@ Notes :

1. V

2. 250

GS

= 0 V

µ

s Pulse Test

-VSD , Source-Drain Voltag e [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

7.5

5.0

VDS = -40 V

VDS = -100 V

VDS = -160 V

2.5

, Gate-Source Voltage [V]

GS

-V

0.0
0 5 10 15 20 25

@ Notes : ID = -6.5 A

QG , Total Gate Charge [nC]