Fairchild Semiconductor SFP9630 Datasheet

Advanced Power MOSFET

SFP9630

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -200V Low R

: 0.581 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25oC)

C

=100oC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25oC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds

T

V

DSS

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

D

GS

AS

AR

D

STG

L

O O

O O O

BV R I

= -200 V

DSS

= 0.8 Ω

DS(on)

= -6.5 A

D

TO-220

1

2

3

1.Gate 2. Drain 3. Source

-200

-6.5

-4.0

1

2

1 1

3

-26

+

_

563

-6.5

-5.0

30

7.0

70

0.56

- 55 to +150

300

V A A

V

mJ

A

mJ

V/ns

W

W/

o

C

Thermal Resistance

R

θJC

R

θCS

R

θJA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

1.79

--

62.5

o

C/W

Rev. B

SFP9630

P-CHANNEL

POWER MOSFET

Electrical Characteristics (T

CharacteristicSymbol

BV ∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

t

d(on)

t

d(off)

Q Q Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain( “ Miller “ ) Charge

gd

=25oC unless otherwise specified)

C

Max. UnitsTyp.Min. Test Condition

V

-200

--

-2.0

--

-0.17

--

4.2 740 125

49 14 22 41 17 29

5.8

13.6

-4.0

-100 100

-100

--

-10

0.8

-965 185

75 35 55 90 45 36

--

V

GS

o

I

V/

nA

µA

nC

=-250µA See Fig 7

C

D

V

DS

V

GS

V

GS

V

DS

V

DS

V

Ω

GS

V

Ω

DS

V

GS

pF

ns

See Fig 5

V

DD

=12Ω

R

G

V

DS

I

=-6.5A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA =-30V =30V =-200V =-160V,TC=125oC

=-10V,ID=-3.3A =-40V,ID=-3.3A

O O

4

=0V,VDS=-25V,f =1MHz

=-100V,ID=-6.5A,

See Fig 13

O

4

O

=-160V,VGS=-10V,

4

O

5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

O

2

O

L=20mH, I

3

O

I

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-6.5A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

<

-6.5A, di/dt 400A/µs, VDDBV

<

_

<

, Starting TJ =25oC

DSS

--

160

0.96

-6.5

-26

-5.0

--

1

--

O

4

--

O

--

_

<

Integral reverse pn-diode

A

in the MOSFET

V

T

=25oC,IS=-6.5A,VGS=0V

J

ns

T

=25oC,IF=-6.5A

J

µC

/dt=100A/µs

di

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 15 V

- 10 V

1

10

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V Bottom : - 4.5 V

0

10

, Drain Current [A]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

2.5

2.0

]

Ω

, [

1.5

DS(on)

R

1.0

Drain-Source On-Resistance

0.5

0.0 0 4 8 12 16 20 24

-ID , Drain Current [A]

V

GS

= -10 V

0

10

@ Notes :

1. 250

2. T

C

VGS = -20 V

s Pulse Test

µ

= 25 oC

1

10

@ Note : TJ = 25 oC

SFP9630

1

10

o

C

150

0

10

, Drain Current [A]

D

-I

- 55

25 oC

-1

10

2 4 6 8 10

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

150 oC

, Reverse Drain Current [A]

DR

-I

-1

10

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

o

C

25

, Source-Drain Voltage [V]

-V

SD

@ Notes :

= 0 V

1. V

GS

2. V

= -40 V

DS

3. 250

s Pulse Test

@ Notes :

1. V

2. 250

µ

= 0 V

GS

s Pulse Test

µ

o

C

1500

C

1000

500

Capacitance [pF]

iss

C

oss

C

rss

0

10

-VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= -40 V

V

10

DS

V

= -100 V

DS

VDS = -160 V

5

, Gate-Source Voltage [V]

GS

-V

0

0 5 10 15 20 25 30

@ Notes : ID =-6.5 A

QG , Total Gate Charge [nC]