Fairchild Semiconductor SFP9610 Datasheet
Advanced Power MOSFET
SFP9610
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10 µA (Max.) @ VDS = -200V
Low R
: 2.084 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
=25oC)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
1/8”
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
O
O
O
O
O
BV
R
I
= -200 V
DSS
= 3.0
DS(on)
= -1.75 A
D
Ω
TO-220
1
2
3
1.Gate 2. Drain 3. Source
-200
-1.75
-1.0
1
2
1
1
3
-7.0
+
_
30
143
-1.75
2.0
-5.0
20
0.16
- 55 to +150
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
o
C
C
Thermal Resistance
R
θJC
R
θCS
R
θJA
©1999 Fairchi ld Semiconduc tor Corpor ation
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.5
--
6.25
--
62.5
o
C/W
Rev. B
SFP9610
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain( “ Miller “ ) Charge
gd
=25oC unless otherwise specified)
C
Max. UnitsTyp.Min. Test Condition
V
-200
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.2
--
--
--
--
--
--
1.1
220
45
16
10
20
27
12
9
1.8
4.8
-4.0
-100
100
-100
--
--
-10
3.0
--
285
65
25
30
50
65
35
11
--
--
V
GS
o
I
V/
nA
µA
nC
=-250µA See Fig 7
C
D
V
V
DS
V
GS
V
GS
V
DS
V
DS
V
Ω
GS
V
Ω
DS
V
GS
pF
ns
See Fig 5
V
DD
=18
R
G
V
DS
I
=-1.75A
D
See Fig 6 & Fig 12
=0V,ID=-250µA
=-5V,ID=-250µA
=-30V
=30V
=-200V
=-160V,TC=125oC
=-10V,ID=-0.9A
=-40V,ID=-0.9A
O
O
4
4
=0V,VDS=-25V,f =1MHz
=-100V,ID=-1.75A,
Ω
See Fig 13
=-160V,VGS=-10V,
O
O
4
5
O
4
5
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
1
O
2
L=70mH, I
O
3
I
O
4
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O
5
Essentially Independent of Operating Temperature
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-1.75A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
AS
_
<
-1.75A, di/dt 250A/µs, VDDBV
SD
_
<
_
<
, Starting TJ =25oC
DSS
O
O
--
--
-1.75
1
--
--
4
--
--
--
110
--
0.42
_
<
-7.0
-4.0
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-1.75A,VGS=0V
J
T
=25oC,IF=-1.75A
J
/dt=100A/µs
di
F
O
4
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
0
10
Bottom : - 4.5 V
, Drain Current [A]
D
-I
-1
10
-1
10
-VDS , Drain-Source Voltage [V]
10
8
]
Ω
, [
6
DS(on)
R
4
Drain-Source On-Resistance
2
0
0 1 2 3 4 5 6 7
-ID , Drain Current [A]
V
GS
10
= -10 V
@ Notes :
1. 250
2. T
0
VGS = -20 V
s Pulse Test
µ
= 25 oC
C
@ Note : TJ = 25 oC
SFP9610
0
10
o
150
C
o
25
, Drain Current [A]
D
-I
C
- 55
-1
1
10
10
2 4 6 8 10
-VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
0
10
150 oC
, Reverse Drain Current [A]
DR
-I
-1
10
0.5 1.0 1.5 2.0 2.5 3.0
o
25
C
-VSD , Source-Drain Voltage [V]
@ Notes :
= 0 V
1. V
GS
2. V
= -40 V
DS
3. 250
s Pulse Test
@ Notes :
1. V
2. 250
µ
= 0 V
GS
s Pulse Test
µ
o
C
400
C
300
200
Capacitance [pF]
100
iss
C
oss
C
rss
0
0
10
-VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
C
= Cds+ C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
2. f = 1 MHz
1
10
GS
= 0 V
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
= -40 V
V
10
DS
V
DS
V
DS
= -100 V
= -160 V
5
, Gate-Source Voltage [V]
GS
-V
0
0 2 4 6 8 10
@ Notes : ID =-1.75 A
QG , Total Gate Charge [nC]
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