Fairchild Semiconductor SFM9214 Datasheet

Advanced Power MOSFET

SFM9214

FEATURES

ν Avalanche Rugged Technology
ν Rugged Gate Oxide Technology
ν Lower Input Capacitance
ν Improved Gate Charge
ν Extended Safe Operating Area
ν Lower Leakage Current : 10 µA(Max.) @ V
ν Lower R

DS(ON)

: 3.5 Ω (Typ.)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25oC)

A

=70oC)

A

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor

*

=25oC)

A

Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds

T

V

I
V
E

I
E

dv/dt

P

, T

J

T

DSS

I

DM

AR

D

GS
AS

AR

D

STG

L

= -250V

DS

*

O
O

O
O
O

BV
R

DS(on)

DSS

= -250 V

= 4.0 Ω

ID= -0.45 A

SOT-223

2

1

3

1. Gate 2. Drain 3. Source

-250

-0.45

-0.3

1

2

1
1

3

-3.6

+

_

30

100

-0.45

0.16

-4.8

1.63

0.013

- 55 to +150

300

V
A
A

V

mJ

A

mJ

V/ns

W

W/

o

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJA

*

When mounted on the mi nimum pad size recommended (PCB Mount).

2001 Fairchild Semiconductor Corporation

Junction-to-Ambient

*

77--

o

C/W

Rev. B1

SFM9214

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller” ) Charge

gd

(TC=25

o

C unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

V

--

--

-250

--

-2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.21

--

--

--

--

--

--

0.57
225

35
13
10
18
24
11

9

2.0

4.6

--

-4.0

-100
100

-10

-100

4.0

--

295

55
20
30
45
60
30
11

--

--

V/oC

GS

I

=-250µA See Fig 7

D

V

V

DS

V

GS

nA

V

GS

VDS=-250V

µA

V

DS

V

Ω

GS

S

V

DS

VGS=0V,VDS=-25V,f =1MHz

pF

VDD=-125V,ID=-1.6A,
R

ns

nC

=24Ω

G

V

DS

I

=-1.6A

D

See Fig 6 & Fig 12

=0V,ID=-250µA

=-5V,ID=-250µA
=-30V
=30V

=-200V,TC=125oC

=-10V,ID=-0.23A
=-40V,ID=-0.23A

See Fig 5

See Fig 13

O

=-200V,VGS=-10V,

O

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Wi dt h Limi ted by Maximum Junction Temperature

1

O

2

L=800mH, I

O

3

I

_

<

O

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

Essentially Independent of Operating Temperature

5

O

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-0.45A, VDD=-50V, RG=27Ω*, Starting TJ =25oC

AS

_

-1.6A, di/dt 250A/µs, VDDBV

<

, Starting TJ =25oC

_

<

DSS

-0.45

--

--

1

--

O

4

--

O

--

--

_

<

--

--

130

0.61

-3.6

-4.0

--

--

Integral reverse pn-diode

A

in the MOSFET

V

T

=25oC,IS=-0.45A,VGS=0V

J

ns

T

=25oC,IF=-1.6A

J

µC

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : -1 5 V

-10 V

-8.0 V

-7.0 V

-6.0 V

0

-5.5 V

10

-5.0 V
Botto m : -4.5 V

-1

10

, Drain Current [A]

D

-I

-2

10

-1

10

-VDS , Drain-Source Volt age [ V]

12

10

]

8

Ω

, [

6

DS(on)

R

4

VGS = -10 V

2

Drain-Source On -Resi sta nce

0

0123456

-ID , Drain Current [A]

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

VGS = -20 V

@ Note : TJ = 25 oC

SFM9214

0

10

150 oC

-1

10

25 oC

@ Notes :

, Drain Current [A]

D

- 55 oC

-I

-2

1

10

10

246810

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

0

10

-1

10

, Reverse Drain Cu rrent [A]

DR

-2

-I

10

0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0

150 oC

25 oC

-VSD , Source-Drain Vol tage [ V]

1. V

GS

2. V

DS

3. 250

@ Notes :

1. V

GS

2. 250

= 0 V
= -40 V

µ

s Pulse Test

= 0 V

µ

s Pulse Test

400

C

300

200

Capacitance [pF]

100

iss

C

oss

C

rss

0

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

-VDS , Drain-Source Voltage [V]

12

VDS = -50 V

10

8

VDS = -125 V
VDS = -200 V

6

4

2

, Gate-Source Volt age [V]

GS

0

0246810

-V
QG , Total Gate Charg e [nC]

@ Notes : ID = -1.6 A

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage