Fairchild Semiconductor SFM9210 Datasheet
Advanced Power MOSFET
SFM9210
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA(Max.) @ V
! Lower R
: 2.25 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
A
=70oC)
A
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
*
=25oC)
A
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, from case for 5-seconds
1/8”
T
V
I
V
E
I
E
dv/dt
P
, T
J
T
DSS
I
DM
AR
D
GS
AS
AR
D
STG
L
= -200V
DS
*
O
O
O
O
O
BV
R
DS(on)
DSS
= -200 V
= 3.0
Ω
ID= -0.5 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
-200
-0.5
-0.3
1
2
1
1
3
-4.0
+
_
30
133
-0.5
0.16
-5.0
1.63
0.013
- 55 to +150
300
V
A
A
V
mJ
A
mJ
V/ns
W
W/
o
C
o
C
Thermal Resistance
Characteristic Max. UnitsSymbol
R
θJA
*
When mounted on the mi nimum pad size recommended (PCB Mount).
Junction-to-Ambient
*
Typ.
77--
o
C/W
Rev. A
SFM9210
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
∆BV/∆T
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain( “ Miller “ ) Charge
gd
(TC=25oC unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-200
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.2
--
--
--
--
--
--
0.6
220
45
16
10
20
27
12
9
1.8
4.8
--
--
-4.0
-100
100
-10
-100
3.0
--
285
65
25
30
50
65
35
11
--
--
V
V/oC
V
nA
µA
Ω
S
pF
ns
nC
=0V,ID=-250µA
GS
I
=-250µA See Fig 7
D
V
=-5V,ID=-250µA
DS
V
=-30V
GS
V
=30V
GS
VDS=-200V
V
=-160V,TC=125oC
DS
=-10V,ID=-0.25A
V
GS
=-40V,ID=-0.25A
V
DS
VGS=0V,VDS=-25V,f =1MHz
VDD=-100V,ID=-1.75A,
R
=18
G
See Fig 13
V
=-160V,VGS=-10V,
DS
I
=-1.75A
D
See Fig 6 & Fig 12
See Fig 5
Ω
O
O
4
O
4
O
4
5
O
4
5
O
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
1
O
2
L=70mH, I
O
3
I
O
4
Pulse Test : Pulse Width = 250µs, Duty Cycle 2%
O
5
Essentially Independent of Operating Temperature
O
Continuous Source Current
S
Pulsed-Source Current
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-0.5A, VDD=-50V, RG=27Ω*, Starting TJ =25oC
AS
_
<
-1.75A, di/dt 250A/µs, VDDBV
SD
_
<
--
1
O
4
O
_
<
, Starting TJ =25oC
DSS
_
<
--
--
--
-110
--
0.42
--
-4.0
-4.0
--
--
A
V
ns
µC
-0.5
--
Integral reverse pn-diode
in the MOSFET
T
=25oC,IS=-0.5A,VGS=0V
J
T
=25oC,IF=-1.75A
J
di
/dt=100A/µs
F
O
4
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
V
GS
Top : - 1 5 V
- 1 0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
0
10
Bo tto m : - 4 .5 V
, Drain Current [A ]
D
-I
-1
10
-1
10
-VDS , Drain-Source Voltage [V]
10
8
]
Ω
6
, [
DS(on)
R
4
Drain-Source On-Resistance
2
0
01234567
-ID , Drain Current [A]
10
VGS = -10 V
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
0
VGS = -20 V
10
@ Note : TJ = 25 oC
SFM9210
0
10
150 oC
, Drain Current [A ]
D
-I
1
10
25 oC
-1
246810
- 55 oC
-VGS , Gate-Source Vo ltage [V]
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
0
10
150 oC
, Reverse Drain C urrent [A]
DR
-I
-1
10
0.5 1.0 1.5 2.0 2.5 3.0
25 oC
-VSD , Source-Drain Voltage [V]
@ Notes :
1. V
2. V
3. 250
@ Notes :
1. V
2. 250
= 0 V
GS
= -40 V
DS
µ
= 0 V
GS
s Pulse Test
µ
s Pulse Test
400
C
300
200
Capacitance [pF]
100
iss
C
oss
C
rss
0
0
10
-VDS , Drain-Source Voltage [V]
C
= Cgs+ Cgd ( Cds= shorted )
iss
= Cds+ C
C
oss
gd
C
= C
rss
gd
@ Notes :
1. V
2. f = 1 MHz
1
10
GS
= 0 V
10
VDS = -40 V
VDS = -100 V
VDS = -160 V
5
, Gate-Source Vo ltage [V]
GS
-V
0
0246810
@ Notes : ID =-1.75 A
QG , Total Gate Char ge [nC]
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
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