Fairchild Semiconductor SFM9014 Datasheet

Advanced Power MOSFET

SFM9014

FEATURES

! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 µA(Max.) @ V
! Lower R

: 0.362 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T

=25oC)

A

=70oC)

A

Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor

*

=25oC)

A

Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds

T

V

I
V
E

I
E

dv/dt

P

, T

J

T

DSS

I

DM

AR

D

GS
AS

AR

D

STG

L

DS

= -60V

O
O

O
O
O

*

BV
R

DS(on)

DSS

= -60 V

= 0.5 Ω

ID= -1.8 A

SOT-223

2

1

3

1. Gate 2. Drain 3. Source

-60

-1.8

-1.1

1

2

-14

±!"

110

1
1

3

-1.8

0.28

-5.5

2.8

0.022

- 55 to +150

300

V
A
A

V

mJ

A

mJ

V/ns

W

W/

o

C

o

C

Thermal Resistance

Characteristic Max. UnitsSymbol Typ.

R

θJA

*

When mounted on the mi nimum pad size recommended (PCB Mount).

Junction-to-Ambient

*

45--

o

C/W

Rev. B

SFM9014

P-CHANNEL

POWER MOSFET

Electrical Characteristics

CharacteristicSymbol

BV

∆BV/∆T

V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

Drain-Source Breakdown Voltage

DSS

Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

fs

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Turn-On Delay Time

t

Rise Time

r

Turn-Off Delay Time

t

Fall Time

f

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain(“Miller”) Charge

gd

(TC=25oC unless otherwise specified)

Max. UnitsTyp.Min. Test Condition

V

-60

--

-2.0

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

--

-0.05

--

--

--

--

--

--

1.43
270

90
25
10
19
21
16

9

1.8

4.2

--

--

-4.0

-100
100

-10

-100

0.5

-­350
135

35
30
50
50
40
11

--

--

V

V/oC

V

nA

µA

Ω

S

pF

ns

nC

=0V,ID=-250µA

GS

I

=-250µA See Fig 7

D

V

=-5V,ID=-250µA

DS

V

=-20V

GS

V

=20V

GS

VDS=-60V
V

=-48V,TC=125oC

DS

=-10V,ID=-0.9A

V

GS

=-30V,ID=-0.9A

V

DS

VGS=0V,VDS=-25V,f =1MHz

VDD=-30V,ID=-6.7A,
R

=24

G

See Fig 13

V

=-48V,VGS=-10V,

DS

I

=-6.7A

D

See Fig 6 & Fig 12

See Fig 5

Ω

O

O

4

O

4

O

4

5

O

4

5

O

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

I

SM

V

t

Q

Notes ;

1

Repetitive Rating : Pulse Wi dt h Limi t ed by Maximum Junction Temperature

O

2

L=40mH, I

O

3

I

O

SD

4

Pulse Test : Pulse Width = 250µs, Duty Cycle 2%

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current
Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=-1.8A, VDD=-25V, RG=27Ω*, Starting TJ =25oC

AS

_

-6.7A, di/dt 200A/µs, V

<

_

<

_

<

DD BVDSS

--

1

--

O

4

--

O

75

--

0.17

--

, Starting TJ =25oC

_

<

-1.8

--

--

--

-14

-3.8

--

--

A

V
ns
µC

Integral reverse pn-diode
in the MOSFET
T

=25oC,IS=-1.8A,VGS=0V

J

T

=25oC,IF=-6.7A

J

di

/dt=100A/µs

F

O

4

P-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V

GS

Top : - 1 5 V

- 1 0 V

1

10

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V
Bo tto m : - 4 .5 V

0

10

, Drain Current [A ]

D

-I

-1

10

-1

10

-VDS , Drain-Source Voltage [V]

1.2

0.9

]

Ω

, [

0.6

DS(on)

R

0.3

Drain-Source On-Resistance

0.0
0 5 10 15 20 25

-ID , Drain Current [A]

VGS = -10 V

@ Notes :

1. 250 µs Pulse Test

2. TC = 25 oC

0

10

VGS = -20 V

1

10

@ Note : TJ = 25 oC

SFM9014

1

10

150 oC

0

10

, Drain Current [A]

-I

D

25 oC

- 55 oC

-1

10

246810

-VGS , Gate-Source Voltage [V]

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

150 oC

, Reverse Drain C urrent [A]

DR

-I

-1

10

25 oC

0.5 1.0 1.5 2.0 2.5 3. 0 3.5 4.0

-VSD , Source-Drain Voltage [V]

@ Notes :

1. V

2. V

3. 250

@ Notes :

1. V

2. 250

GS

GS
DS

= 0 V

µ

= 0 V
= -30 V

s Pulse Test

µ

s Pulse Test

500

400

C

iss

C

300

oss

200

Capacitance [pF]

C

100

rss

0

0

10

-VDS , Drain-Source Voltage [V]

C

= Cgs+ Cgd ( Cds= shorted )

iss

= Cds+ C

C

oss

gd

C

= C

rss

gd

@ Notes :

1. V

2. f = 1 MHz

1

10

GS

= 0 V

10

VDS = -12 V

VDS = -30 V

VDS = -48 V

5

, Gate-Source Voltage [V]

GS

-V

0

0246810

QG , Total Gate Charge [nC]

@ Notes : ID =-6.7 A

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage