Fairchild Semiconductor S3A, S3B, S3D, S3J, S3K Datasheet
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Features
• Low profile package.
• Glass passivated junction.
S3A - S3M
SMC/DO-214AB
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
0.280 (7.112)
0.124 (3.150)
0.108 (2.743)
0.260 (6.604)
2
0.320 (8.128)
0.305 (7.747)
1
0.245 (6.223)
0.220 (5.588)
0.103 (2.616)
0.079 (2.007)
S3A-S3M
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
3.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
= 100°C
@ T
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 47
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
3A 3B 3D 3G 3J 3K 3M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 3.0 A 1.2 V
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitanc e
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
3.0 A
100 A
2.7
21
W
mW/°C
°
C/W
°
C
°
C
5.0
250
2.5
60 pF
µA
µA
µS
1998 Fairchild Semiconductor Corporation
S3A-S3M, Rev. A
T ypical Characteristics
S3A-S3M
General Purpose Rectifiers
(continued)
Forward Current De ratin g Curve
4
3.5
3
2.5
SINGLE PHASE
HALF WAV E
2
60HZ
RESISTIVE OR
1.5
INDUCTIVE LOAD
P.C.B. MO UNTED
1
ON 0. 3x 0.3 "
FORWAR D CURRE NT (A )
(8.0x8.0 mm)
0.5
COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150
LEAD TEMPERATURE ( C)
º
Non-Repetitive Surge Current
120
100
80
60
40
8.3mm Single Half Sine-Wave
20
JEDEC Method
FORWARD SURGE CURRENT (A)
0
12 51020 50100
NUMBER OF CYCLES AT 60Hz
Forward Charact eristics
100
10
1
0.1
FORWARD CURRE NT (A)
0.01
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
T = 25 C
º
J
Pulse Width = 300µs
2% Duty Cycle
FORWARD VOLTAGE (V)
Reverse Characteris tics
100
º
T = 125 C
µ
10
1
REVERSE CURRENT ( A)
0.1
0 20406080100120140
A
REVERSE VOLTAGE (V)
º
T = 25 C
A
Junction Capacitance
100
50
T = 25 C
º
CAPACITANCE (pF)
10
5
1 5 10 50 100
J
REVERSE VO LTA GE (V)
S3A-S3M, Rev. A
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