Fairchild Semiconductor S1A, S1G, S1B, S1D, S1K Datasheet
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Features
• Low profile package.
• Glass passivated junction.
S1A - S1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
0.181 (4.597)
0.062 (1.575)
0.055 (1.397)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
1
0.114 (2.896)
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
S1A-S1M
0.060 (1.524)
0.030 (0.762)
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Average Rectified Current
= 100°C
@ T
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 85
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 1.0 A 1.1 V
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitanc e
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
1.0 A
40 A
1.4
11
W
mW/°C
°
C/W
°
C
°
C
1.0
50
1.8
12 pF
µA
µA
µS
1998 Fairchild Semiconductor Corporation
S1A-S1M, Rev. A
T ypical Characteristics
S1A-S1M
General Purpose Rectifiers
(continued)
Forward Current De ratin g Curve
2
1
FORWAR D CURRE NT (A )
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE ( C)
SINGLE PHASE
HALF WAV E
60HZ
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MO UNTED
ON 0.315 x0.31 5"
(8.0x8.0mm)
COPPER PAD AREAS
º
Non-Repetitive Surge Current
30
25
20
15
10
5
FORWARD SURGE CURRENT (A)
0
12 51020 50100
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave
JEDEC Method
Forward Charact eristics
100
10
1
0.1
FORWAR D CU RRENT (A)
0.01
0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
Reverse Characteristics
100
10
µ
1
0.1
0.01
REVE RSE CUR R ENT ( A)
0.001
0 20406080100120140
º
T = 125 C
J
REVERSE VOLTAGE (V)
º
T = 75 C
J
º
T = 25 C
J
Junction Capacitance
100
50
10
5
CAPACITANC E (pF)
1
0.01 0.1 1 10 100
T = 25 C
º
J
f = 1.0 MHz
Vsig = 50mV p-p
REVERSE VOLTAGE (V)
The rm a l Im pe d a n ce
100
Units Mounted On
20"x 20"(5.4mm )+0.5mil
50
inches(0.013mm)
Thick Copper Land Areas
º
10
5
THERMAL IMPEDANCE ( C/W)
1
0.01 0.1 1 10 100
2
PULSE DURATION (SEC.)
S1A-S1M, Rev. A
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