Fairchild Semiconductor S100 Datasheet

Features

• Glass passivated junctions.

• High current capability, low V

• For use in low voltage, high

frequency inverters free
wheeling, and polarity
protection applications.

SS12-S100

Discrete POWER & Signal

Technologies

SS12 - S100

0.18 1 (4. 597)

0.06 2 (1. 575)

0.05 5 (1. 397)

.

F

SMA/DO-214AC

COLOR BAND DENOTES CATHODE

0.15 7 (3. 988)

2

0.20 8 (5. 283)

0.18 8 (4. 775)

1

0.11 4 (2. 896)

0.09 8 (2. 489)

0.09 6 (2. 438)

0.07 8 (1. 981)

0.06 0 (1. 524)

0.03 0 (0. 762)

0.00 8 (0. 203)

0.00 4 (0. 102)

0.01 2 (0. 305)

0.00 6 (0. 152)

1.0 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

T

stg

T

J

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient ** 88
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +125

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics T

Parameter Device Units

12 13 14 15 16 18 19 100

Peak Repetitive Reverse Volt age 20 30 40 50 60 80 90 100 V
Maximum RMS Voltage 14 21 28 35 42 56 64 71 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C

(Note 1)

@ rated V

R

TA = 100°C

Maximum Forward Voltage @ 1.0 A 500 700 850 mV

Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

20 30 40 50 60 80 90 100 V

= 25°C unless otherwise noted

A

= 75°C

A

= 25°C unless otherwise noted

A

0.2
10

1.0 A

40 A

1.1
11

mW/°C

°

C/W

W

°

C

°

C

mA
mA

1998 Fairchild Semiconductor Corporation

SS12-S100, Rev. A

T ypical Characteristics

SS12-S100

Schottky Barrier Rectifiers

(continued)

Forward Current De ratin g Curve

1

0.75

SINGLE PHASE
HALF WAVE

0.5

60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED

0.25

FORWARD CURRENT (A )

ON 0.2x0.2"(5.0x5.0mm)
COPPER PAD AREAS

0

0 20 40 60 80 100 120 140

LEAD TEMPERATURE ( C)

º

Non-Repetitive Surge Current

30

25

20

15

10

5

FORWARD SURGE CURRENT (A)

0

12 51020 50100

NUMBER OF CYCLES AT 60Hz

8.3ms Single Half Sine- Wav e

JEDEC Method

Forward Charact eristics

20

SS12 - SS14

10

5

1

FORWARD CU RRENT (A)

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

FORWARD VOLTAGE (V)

SS18 - S100

SS15 - SS16

º

T = 25 C

J

Pulse Width = 300µS

1% Duty Cycl e

Junction Capacitance

400

200

100

50
40

30

CAPACITANCE (p F)

20

10

0.1 0.5 1 5 10 50 100

REVERSE VOLTAGE (V)

º

T = 25 C

J

SS12-S100, Rev. A