Fairchild Semiconductor RURP8100 Datasheet
MUR8100E, RURP8100
Data Sheet December 2002
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(t
< 75ns) with soft recovery characteristics. They have a
rr
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifie rs in a v ariety of s wit ching po wer
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics m in im ize ringing and electrical noi se i n m any
power switching circuits, thus reducing power loss in the
switching transistor .
Formerly developmental type TA09617.
Ordering Information
PART NUMBER PACKAGE BRAND
MUR8100E TO-220AC MU8100
RURP8100 TO-220AC RURP8100
NOTE: When ordering, use entire part number.
Symbol
K
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 155oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave 1 Phase 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
MUR8100E
RURP8100 UNITS
1000 V
1000 V
1000 V
8A
16 A
100 A
75 W
20 mJ
-55 to 175
AVL
, T
R
D
J
o
C
©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100
Electrical Specifications T
= 25oC, Unless Otherwise Specified.
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
θJC
IF = 8A - - 1.8 V
I
= 8A, TC = 150oC--1.5V
F
VR = 1000V - - 100 µA
V
= 1000V, TC = 150oC - - 500 µA
R
IF = 1A - - 85 ns
I
= 8A, dIF/dt = 200A/µs - - 100 ns
F
IF = 8A, dIF/dt = 200A/µs-50-ns
IF = 8A, dIF/dt = 200A/µs-30-ns
IF = 8A, dIF/dt = 200A/µs - 500 - nC
VR = 10V, IF = 0A - 30 - pF
--2.0oC/W
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
= Instantaneous reverse current.
I
R
= Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb.
t
rr
t
= Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
a
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
t
b
= Reverse recovery charge.
Q
RR
C
= Junction Capacitance.
J
= Thermal resistance junction to case.
R
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
, REVERSE CURRENT (µA)
R
I
0.001
200
0.1
0.01
175oC
10
1
0
200 400
VR, REVERSE VOLTAGE (V)
100oC
25oC
600
800
40
10
, FORWARD CURRENT (A)
F
I
1
0.5
00.511.5
175oC
o
25
C100oC
22.5
VF, FORWARD VOLTAGE (V)
3
FIGURE 1. FORWARD CURRENT vs FOR WARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLT AGE
1000
©2002 Fairchild Semiconductor Corporation MUR8100E, RURP8100 Rev. B1
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