Fairchild Semiconductor RURD660, RURD660S Datasheet
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RURD660, RURD660S
Data Sheet January 2002
6A, 600V Ultrafast Diodes
The RURD660 and RURD660S are ultrafast diodes with soft
recovery characteristics (t
< 55ns). They have low forward
rr
voltage drop and are silicon nitride passivated ion-implanted
epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49038.
Ordering Information
PART NUMBER PACKAGE BRAND
RURD660 TO-251 RUR660
RURD660S TO-252 RUR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in the tape and reel, i.e., RURD660S9A.
Symbol
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
C
K
A
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B
= 155
C
o
C)
o
T
= 25
C, Unless Otherwise Specified
C
JEDEC STYLE TO-252
RURD660
RURD660S UNITS
600 V
600 V
600 V
6A
12 A
60 A
50 W
10 mJ
-65 to 175
300
260
STG
RRM
RWM
F(AV)
FRM
FSM
AVL
, T
PKG
R
D
J
L
o
C
o
C
o
C
0 600400300200
100
0.01
0.1
1
10
500
100 500
175oC
25oC
V
R
, REVERSE VOLTAGE (V)
0.001
100oC
I
R
, REVERSE CURRENT (µA)
µ
µ
θ
θ
RURD660, RURD660S
Electrical Specifications
T
o
= 25
C, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
JC
I
= 6A - - 1.5 V
F
I
= 6A, T
F
V
R
V
R
I
= 1A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
V
R
= 150
C
= 600V - - 100
= 600V, T
= 10V, I
= 150
C
/dt = 200A/ µ s- - 55 ns
F
/dt = 200A/ µ s- - 60 ns
F
/dt = 200A/ µ s - 28 - ns
F
/dt = 200A/ µ s - 16 - ns
F
/dt = 200A/ µ s - 150 - nC
F
= 0A - 25 - pF
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
t
= Time from peak I
b
Q
= Reverse recovery charge.
RR
C
= Junction capacitance.
J
R
= Thermal resistance junction to case.
JC
to projected zero crossing of I
RM
pw = Pulse width.
D = Duty cycle.
o
C - - 1.2 V
o
C - - 500
--3
+ t
.
a
b
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
RM
o
A
A
C/W
Typical Performance Curves
, FORWARD CURRENT (A)
I
©2002 Fairchild Semiconductor Corporation RURD660, RURD660S Rev. B
30
10
o
C
100
F
1
0.5
0 0.5 2.5121.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
175oC
VF, FORWARD VOLTAGE (V)
25oC
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