Fairchild Semiconductor RS1A, RS1B, RS1G, RS1D, RS1J Datasheet
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Features
• Glass passivated junction.
• For surface mounted applications.
• Built in strain relief, ideal for automated
placement.
RS1A - RS1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Discrete POWER & Signal
Technologies
0.18 1 (4. 597)
0.06 2 (1. 575)
0.05 5 (1. 397)
0.15 7 (3. 988)
2
0.20 8 (5. 283)
0.18 8 (4. 775)
1
0.11 4 (2. 896)
0.09 8 (2. 489)
0.09 6 (2. 438)
0.07 8 (1. 981)
RS1A-RS1M
0.06 0 (1. 524)
0.03 0 (0. 762)
0.00 8 (0. 203)
0.00 4 (0. 102)
0.01 2 (0. 305)
0.00 6 (0. 152)
1.0 Ampere Fast Recovery Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JC
T
stg
T
J
Average Rectified Current
@ T
= 100°C
A
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimp osed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 105
Ther mal Resistance, Junction t o Case ** 32
Storage Temperature Range -55 to +150
Operating Junction Temperature -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS Voltag e 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 1.0 A
Maximum Rev erse Recovery Time
= 0.5 A, IR = 1.0 A, I
I
F
= 0.25 A
rr
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
150 250 500 nS
1.0 A
30 A
1.19
9.5
W
mW/°C
C/W
°
C/W
°
C
°
C
°
5.0
50
1.3 V
10 pF
A
µ
A
µ
1999 Fairchild Semiconductor Corporation
RS1A-RS1M, Rev. A
T ypical Characteristics
RS1A-RS1M
Fast Recovery Rectifiers
(continued)
Forward Current Derating Curve
1.6
1.4
1.2
1
0.8
RESISTIVE OR
INDUCTIVE LOAD
P.C. B . MOU N T E D
0.6
ON 0.2 x 0.2"
(5. 0 x 5. 0 mm)
0.4
COPPER PAD AREAS
FORWAR D CURRENT (A)
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( C)
º
Forward Charact eristics
10
T = 125 C
º
A
1
º
T = 25 C
0.1
FORWARD CURRE NT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE (V)
A
Pulse Width = 300µs
2% Duty Cycle
Non-Repetitive Surge Current
30
25
20
15
10
5
0
PEAK FORWARD SURGE CURRENT (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
Reverse Characteris tics
10
T = 125 C
º
µ
1
0.1
0.01
REVERSE CURRENT ( A)
0.001
0 20406080100120140
PERCENT OF RA TED PEAK REVER SE VOLTAGE (%)
A
T = 100 C
º
A
º
T = 25 C
A
Junction Capacitance
50
20
10
5
CAPACITANCE (pF)
1
1 2 5 10 20 50 100
REVERSE VOLTAGE (V)
RS1A-RS1M, Rev. A
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