Fairchild Semiconductor RLD03N06CLE Datasheet

July 1996

RLD03N06CLE,

SEMICONDUCTOR

RLD03N06CLESM, RLP03N06CLE

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped

Logic Level N-Channel Enhancement-Mode Power MOSFETs

Features

• 0.30A, 60V

•r

• Built in Current Limit I

DS(ON)

= 6.0Ω

0.140 to 0.210A at 150oC

LIMIT

• Built in Voltage Clamp

•

Temperature Compensating

PSPICE Model

• 2kV ESD Protected

• Controlled Switching Limits EMI and RFI

Description

The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
are intelligent monolithic power circuits which incorporate a lat­eral bipolar transistor, resistors, zener diodes and a power MOS
transistor. The current limiting of these de vices allow it to be used
safely in circuits where a shorted load condition may be encoun­tered. The drain-source voltage clamping offers precision control
of the circuit voltage when switching inductive loads. The “Logic
Level” gate allows this device to be fully biased on with only 5.0V
from gate to source, thereby facilitating true on-off power control
directly from logic level (5V) integr ated circuits.

The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE
incorporate ESD protection and are designed to withstand 2kV
(Human Body Model) of ESD.

PACKAGING AVAILABILITY

Packages

DRAIN

(FLANGE)

(FLANGE)

Symbol

DRAIN

JEDEC TO-220AB

JEDEC TO-251AA

JEDEC TO-252AA

GATE

SOURCE

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

D

PART NUMBER PACKAGE BRAND

RLD03N06CLE TO-251AA 03N06C
RLD03N06CLESM TO-252AA 03N06C
RLP03N06CLE TO-220AB 03N06CLE

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
RLD03N06CLESM9A.

G

S

Formerly developmental type TA49026.

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate Source Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Reverse Voltage Gate Bias Not Allowed

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Power Dissipation

TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . ESD 2 KV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

= +25oC

C

STG

DSS

DGR

GS

, T

RLD03N06CLE,

RLD03N06CLESM,

RLP03N06CLE UNITS

D

D

T

J

60 V
60 V

+5.5 V

Self Limited

30

0.2

-55 to +175

W

W/oC

o

C

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1996

1

File Number 3948.3

Specifications RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I

On Resistance r

Limiting Current I

Turn-On Time t

Turn-On Delay Time t

Rise Time t

DSSID

GS(TH)VGS

DSS

VDS = 45V,
VGS = 0V

GSS

DS(ON)ID

VGS =5V TJ = +25oC--5µA

VGS = 5V

DS(LIMIT)VDS

VGS = 5V

ON

VDD = 30V, ID = 0.10A,
RL = 300Ω, VGS = 5V,

D(ON)

RGS = 25Ω

R

= 250µA, VGS = 0V 60 - 85 V

= VDS, ID = 250µA 1 - 2.5 V

TJ = +25oC--50µA

T

= +150oC - - 200 µA

J

T

= +150oC--20µA

J

= 0.100A,

TJ = +25oC - - 6.0 Ω

TJ = +150oC - - 12.0 Ω

= 15V,

TJ = +25oC 280 - 420 mA

TJ = +150oC 140 - 210 mA

- - 7.5 µs

- - 2.5 µs

- - 5.0 µs

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

Input Capacitance C

D(OFF)

F

OFF

ISS

VDS = 25V, VGS = 0V,
f = 1MHz

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

OSS

RSS

JC

θ

JA

θ

TO-220 Package - - 80

TO-251 and TO-252 Packages - - 100

Source-Drain Diode Ratings and Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

Reverse Recovery Time t

SD

RR

ISD = 0.1A - - 1.5 V

ISD = 0.1A, dISD/dt = 100A/µs - - 1.0 ms

- - 7.5 µs

- - 5.0 µs

- - 12.5 µs

- 100 - pF

-65-pF

- 3.0 - pF

- - 5.0

o

C/W

o

C/W

o

C/W

2

RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE

Typical Performance Curves

1

OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE

DC

, DRAIN CURRENT (A)

D

I

0.1
1 10 100

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 1. SAFE OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(ON)

TC = +25oC

25oC

175oC

10

1

0.5

0.2

, NORMALIZED

JC

θ

Z

THERMAL RESPONSE

0.01

0.1

-5

10

0.1

0.05

0.02

0.01
SINGLE PULSE

10

t, RECTANGULAR PULSE DURATION (s)

IMPEDANCE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

-3

10

-2

10

-1

10

2

1/t2

+ T

JC

C

θ

0

10

1

10

2.0

1.5

1.0

0.5

, NORMALIZED DRAIN CURRENT

D

I

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 3. TYPICAL NORMALIZED DRAIN CURRENT vs

JUNCTION TEMPERATURE

= +25oC

0.40

0.30

0.20

VGS = 5V

PULSE DURATION = 250µs,

V

GS

= 7.5V

T

C

V

GS

V

GS

= 4V

= 3V

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
25 50 75 100 125 150 175

0

0

TC, CASE TEMPERATURE (oC)

FIGURE 4. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

0.60

PULSE TEST

0.50

PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX

0.40

0.30

V

DD

+25oC

= 15V

o

-55

C

, DRAIN CURRENT (A)

D

0.10

I

0

0 1.0 2.0 3.0 4.0 5.0

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

0.20

, ON STATE DRAIN CURRENT (A)

0.10

D(ON)

I

0

0.0 2.0 3.0 4.0 5.01.0
V

GS

, GATE-TO-SOURCE VOLTAGE (V)

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

3

+175

o

C

RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE

Typical Performance Curves

2.5

2.0

1.5

1.0

, NORMALIZED ON RESISTANCE

0.5

DS(ON)

r

0.0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 7. NORMALIZED r

2.0

1.5

vs JUNCTION TEMPERA TURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

DS(ON)

(Continued)

= 5V,PULSE DURATION = 250µs,

V

GS

ID = 0.30A

ID = 20mA

2.0

1.5

1.0

, NORMALIZED GATE

THRESHOLD VOLTAGE

GS(TH)

0.5

V

0.0

-80 -40 0 40 80 120 200160
TJ, JUNCTION TEMPERATURE (oC)

VGS= VDS,

TEMPERATURE

1

TEMPERATURES LISTED ARE STARTING
JUNCTION TEMPERATURES

= 250µA

I

D

TC = +25oC

1.0

, NORMALIZED DRAIN-TO-

0.5

DSS

BV

SOURCE BREAKDOWN VOLTAGE

0.0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) tAV, TIME IN CLAMP (s)

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

300

200

100

C, CAPACITANCE (pF)

0

0 5 10 15 20 25

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS = 0V, FREQUENCY (f) = 1MHz

C

ISS

C

OSS

C

RSS

, CLAMPED DRAIN CURRENT (A)

(CLAMP)

I

0.1

0.001

+150oC

0.01 0.1 1 10

FIGURE 10. SELF-CLAMPED INDUCTIVE SWITCHING

60

45

VDD = BV

DSS

30

RL = 600Ω
I

G(REF)

V

= 5V

GS

I

G REF()

--------------------- -

40

I

GACT()

= 0.1mA

15

, DRAIN SOURCE VOLTAGE (V)

DS

V

0

I

G REF()

--------------------- -

10

I

GACT()

0.75 BV

0.50 BV

0.25 BV

t, TIME (µs)

DSS
DSS
DSS

+25oC
+50oC

+75oC

+100oC

+125oC

5.00

3.75

2.50

1.25

0.00

, GATE SOURCE VOLTAGE (V)

GS

V

FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE

VOLTAGE

FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260

4