Fairchild Semiconductor RHRP8120 Datasheet
CATHODE
ANODE
CATHODE
(FLANGE)
RHRP8120
Data Sheet January 2002
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery
characteristics (t
< 55ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49096.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP8120 TO-220AC RHRP8120
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
C
A
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
©2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B
= 140
C
o
C)
o
T
= 25
C, Unless Otherwise Specified
C
RHRP8120 UNITS
1200 V
1200 V
1200 V
8A
16 A
100 A
75 W
20 mJ
-65 to 175
o
C
STG
RRM
RWM
F(AV)
FRM
FSM
AVL
, T
R
D
J
VR, REVERSE VOLTAGE (V)
0
400
800
1200
600
1000
500
0.01
0.1
1
10
I
R
, REVERSE CURRENT (µA)
200
0.001
25oC
100oC
175oC
100
µ
µ
θ
θ
RHRP8120
Electrical Specifications
o
T
= 25
C, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
JC
I
= 8A - - 3.2 V
F
I
= 8A, T
F
V
= 1200V - - 100
R
V
= 1200V, T
R
I
= 1A, dI
F
I
= 8A, dI
F
I
= 8A, dI
F
I
= 8A, dI
F
I
= 8A, dI
F
V
= 10V, I
R
o
= 150
C
C - - 2.6 V
= 150
C
/dt = 200A/ µ s--55ns
F
/dt = 200A/ µ s--70ns
F
/dt = 200A/ µ s - 30 - ns
F
/dt = 200A/ µ s - 20 - ns
F
/dt = 200A/ µ s - 165 - nC
F
= 0A - 25 - pF
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
t
= Time from peak I
b
Q
= Reverse Recovery Charge.
RR
C
= Junction Capacitance.
J
R
= Thermal resistance junction to case.
JC
to projected zero crossing of I
RM
pw = Pulse Width.
D = Duty Cycle.
o
C - - 500
--2
+ t
.
a
b
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
RM
o
A
A
C/W
Typical Performance Curves
40
10
FORWARD CURRENT (A)
175oC
F,
I
1
0.5
0123 54
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation RHRP8120 Rev. B
100oC
25oC
VF, FORWARD VOLTAGE (V)
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