Fairchild Semiconductor RHRP30120 Datasheet
Data Sheet January 2002
RHRP30120
30A, 1200V Hyperfast Diode
The RHRP30120 is a hyperfast diode with soft recovery
characteristics (t
< 65ns).It has half the recovery time of
rr
ultrafastdiodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high frequency switching
power supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors.
Formerly developmental type TA49041.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP30120 TO-220AC RHR30120
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• HyperfastwithSoftRecovery..................<65ns
• OperatingTemperature......................175
o
C
• ReverseVoltage............................1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
A
Absolute Maxim um Rati ng s T
PeakRepetitiveReverseVoltage ...........................................................V
WorkingPeakReverseVoltage............................................................V
DCBlockingVoltage .......................................................................V
AverageRectifiedForwardCurrent..........................................................I
=78oC)
(T
C
RepetitivePeakSurgeCurrent .............................................................I
(Square Wave, 20kHz)
NonrepetitivePeakSurgeCurrent........................................................... I
(Halfwave, 1 Phase, 60Hz)
MaximumPowerDissipation.................................................................P
AvalancheEnergy(SeeFigures7and8).....................................................E
OperatingandStorageTemperature......................................................T
=25oC
C
RRM
RWM
F(AV)
FRM
FSM
AVL
STG,TJ
RHRP30120 UNITS
1200 V
1200 V
R
D
1200 V
30 A
60 A
300 A
125 W
30 mJ
-65 to 175
o
C
©2002 Fairchild SemiconductorCorporation RHRP30120 Rev. C
RHRP30120
Electrical Specifications T
=25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
R
θJC
IF= 30A - - 3.2 V
I
=30A,TC=150oC--2.6V
F
VR= 1200V - - 250 µA
V
= 1200V, TC=150oC- - 1mA
R
IF=1A,dIF/dt = 100A/µs- -65ns
I
=30A,dIF/dt = 100A/µs- - 85 ns
F
IF=30A,dIF/dt = 100A/µs- 48 - ns
IF=30A,dIF/dt = 100A/µs- 22 - ns
--1.2oC/W
DEFINITIONS
= Instantaneousforwardvoltage (pw = 300µs, D = 2%).
V
F
= Instantaneous reverse current.
I
R
= Reverse recovery time (See Figure6), summation of ta+tb.
t
rr
= Time to reach peak reverse current (See Figure 6).
t
a
=TimefrompeakIRMto projected zero crossing of IRMbasedonastraightlinefrompeakIRMthrough25% of IRM(See Figure 6).
t
b
= Thermal resistance junction to case.
R
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
100
10
, FORWARD CURRENT (A)
F
I
1
0
175oC
100oC
25oC
0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE(V)
3.5 4.0 4.5
FIGURE 1. FORWARD CURRENT v s FORWARDVOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
, REVERSE CURRENT (µA)
R
0.01
I
0.001
500
100
1.0
0.1
175oC
10
100oC
25oC
0
200 400 600 800 1000
, REVERSE VOLTAGE (V)
V
R
1200
©2002 Fairchild SemiconductorCorporation RHRP30120 Rev. C
Loading...