Fairchild Semiconductor RHRG30120 Datasheet
Data Sheet January 2002
RHRG30120
30A, 1200V Hyperfast Diode
The RHRG30120 is a hyperfast diode with soft recovery
characteristics (t
< 65ns). It has half the recovery time of
rr
ultrafastdiodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of high f requency switching
power supplies and other power s witching applications. Its
low stored charge and hyperfast soft recovery minimize
ringing and electricalnoise in many power switching circuits,
thus reducing power loss in the switching transistors.
Formerly developmental t ype TA49041.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRG30120 TO-247 RHRG30120
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• HyperfastwithSoftRecovery..................<65ns
• OperatingTemperature......................175
o
C
• ReverseVoltage............................1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-247
ANODE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
Absolute Maxim um Rating s T
PeakRepetitiveReverseVoltage ...........................................................V
WorkingPeakReverseVoltage............................................................V
DCBlockingVoltage .......................................................................V
AverageRectifiedForwardCurrent..........................................................I
=78oC)
(T
C
RepetitivePeakSurgeCurrent .............................................................I
(Square Wave, 20kHz)
NonrepetitivePeakSurgeCurrent........................................................... I
(Halfwave, 1 Phase, 60Hz)
MaximumPowerDissipation.................................................................P
AvalancheEnergy(SeeFigures7and8).....................................................E
OperatingandStorageTemperature......................................................T
=25oC
C
RRM
RWM
F(AV)
FRM
FSM
AVL
STG,TJ
RHRG30120 UNITS
1200 V
1200 V
R
D
1200 V
30 A
60 A
300 A
125 W
30 mJ
-65 to 175
o
C
©2002 Fairchild SemiconductorCorporation RHRG30120 Rev. C
RHRG30120
Electrical Specifications T
=25oC, Unless Oth erwis e Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
R
θJC
IF= 30A - - 3.2 V
I
=30A,TC=150oC--2.6V
F
VR= 1200V - - 250 µA
V
= 1200V, TC=150oC- - 1mA
R
IF=1A,dIF/dt = 100A/µs- -65ns
I
=30A,dIF/dt = 100A/µs- - 85 ns
F
IF=30A,dIF/dt = 100A/µs- 48 - ns
IF=30A,dIF/dt = 100A/µs- 22 - ns
--1.2oC/W
DEFINITIONS
= Instantaneousforwardvoltage (pw = 300µs, D = 2%).
V
F
= Instantaneous reverse current.
I
R
= Reverse recovery time (See Figure6), summation of ta+tb.
t
rr
= Time to reach peak reverse current (See Figure 6).
t
a
=TimefrompeakIRMto projected zero crossing of IRMbasedonastraightlinefrompeakIRMthrough25% of IRM(See Figure 6).
t
b
= Thermal resistance junction to case.
R
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
200
100
10
, FORWARD CURRENT (A)
F
I
1
0
175oC
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
, FORWARD VOLTAGE (V)
V
F
100oC
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CUR RENT vs REVERSE VOLTAGE
500
100
10
1.0
0.1
, REVERSE CURRENT (µA)
R
I
0.01
0.001
0 200 400 600 800 1000 1200
, REVERSE VOLTAGE (V)
V
R
175oC
100oC
25oC
©2002 Fairchild S emiconductor Corporation RHRG30120 Rev. C
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