Fairchild Semiconductor RHRD660S Datasheet
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RHRD660, RHRD660S
Data Sheet January 2002
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (t
< 30ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD660 TO-251 RHR660
RHRD660S TO-252 RHR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
JEDEC STYLE TO-252
C
A
o
T
= 25
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(T
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 152
C
o
C)
C, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
RHRD660, RHRD660S UNITS
600 V
600 V
600 V
6A
12 A
60 A
50 W
10 mJ
-65 to 175
300
260
AVL
, T
R
D
J
L
o
C
o
C
o
C
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
0 600400300200
100
0.01
0.1
1
10
1000
100 500
100oC
175oC
25oC
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (µA)
µ
µ
θ
θ
RHRD660, RHRD660S
Electrical Specifications
T
o
= 25
C, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
R
t
rr
t
a
t
b
Q
RR
C
J
R
JC
I
= 6A - - 2.1 V
F
I
= 6A, T
F
V
R
V
R
I
= 1A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
I
= 6A, dI
F
V
R
= 150
C
= 600V - - 100
= 600V, T
= 10V, I
= 150
C
/dt = 200A/ µ s- - 30 ns
F
/dt = 200A/ µ s- - 35 ns
F
/dt = 200A/ µ s - 16 - ns
F
/dt = 200A/ µ s - 8.5 - ns
F
/dt = 200A/ µ s - 45 - nC
F
= 0A - 20 - pF
F
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t
rr
t
= Time to reach peak reverse current (See Figure 9).
a
t
= Time from peak I
b
Q
= Reverse recovery charge.
RR
C
= Junction capacitance.
J
R
= Thermal resistance junction to case.
JC
to projected zero crossing of I
RM
pw = Pulse width.
D = Duty cycle.
o
C - - 1.7 V
o
C - - 500
--3
+ t
.
a
b
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
RM
o
A
A
C/W
Typical Performance Curves
©2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B
30
10
, FORWARD CURRENT (A)
F
I
1
0.5
175oC
0 0.5 2.5121.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE
100oC
VF, FORWARD VOLTAGE (V)
25oC
3
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