Fairchild Semiconductor RGF1J, RGF1K, RGF1M, RGF1A, RGF1B Datasheet

RGF1A - RGF1M

Features

Glass passivated junction.

•

• For surface mounted application.

• Low forward voltage drop.

• High current capability.

• Easy pick and place.

• High surge current capability.

3.93

3.73

1.67

1.47

+

2.38

2.18

5.49

5.29

Minimum Recommende d

Land Pattern

1.0 Ampere Fast Recovery Rectifiers

SMA/DO-214AC

COLOR BAND DENOTES CATHODE

0.062 (1.575)

0.055 (1.397)

0.060 (1.524)

0.030 (0.762)

RGF1A-RGF1M

0.181 (4.597)

0.157 (3.988)

2

0.208 (5.283)

0.188 (4.775)

0.008 (0.203)

0.002 (0.051)

0.114 (2.896)

1

0.098 (2.489)

0.096 (2.438)

0.078 (1.981)

0.012 (0.305)

0.006 (0.152)

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current

= 125°C

@ T

L

Peak Forward Surge Current

8.3 ms single half -sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient ** 85
Thermal Resistance, J unction to Lead** 28
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +175

1.0 A

30 A

1.76

11.7

mW/°C

°
°

W

C/W
C/W

°

C

°

C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

1A 1B 1D 1G 1J 1K 1M

Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time

I

= 0.5 A, IR = 1.0 A, I

F

= 0.25 A

rr

Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V

5.0

100

1.3 V

150 250 500 nS

8.5 pF

A

µ

A

µ

1998 Fairchild Semiconductor International

RGF1A-RGF1M, Rev. E

T ypical Characteristics

RGF1A-RGF1M

Fast Recovery Rectifiers

(continued)

Forward Current Deratin g Curve

1.25

1

0.75

RESISTIVE OR
INDUCTIVE LOAD

0.5

P.C . B. M O UN T E D
ON 0. 2 x 0. 2"
(5. 0 x 5.0 mm)

0.25

COPPER PAD AREAS

FORWAR D CURRENT (A)

0

0 25 50 75 100 125 150 175

LEAD TEMPERATURE ( C)

º

Forward Charact eristics

20
10

T = 125 C

º

A

1

T = 25 C

º

0.1

FORWAR D CU RRENT (A)

0.01

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

FORWAR D VO LTA GE (V)

A

Pulse Width = 300µs
2% Duty Cycle

Non-Repetitive Surge Curre nt

50

40

30

20

10

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBE R OF CY CL E S AT 60Hz

Reverse Characteris tics

30
10

µ

1

0.1

REVERSE CURRENT ( A)

0.01
0 20406080100120140

PERCENT OF RATED PEA K REVERSE VOL TAGE (%)

T = 150 C

º

A

T = 100 C

º

A

º

T = 25 C

A

Junction Capacitance

50

20

10

5

CAPACITAN CE (p F)

2

1

12 51020 50100

REVERSE VOLTAGE (V)

RGF1A-RGF1M, Rev. E