Fairchild Semiconductor RFG70N06, RFP70N06 Datasheet

G

D

S

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

RFG70N06, RFP70N06, RF1S70N06,

RF1S70N06SM

Data Sheet January 2002

70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs

These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA78440.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG70N06 TO-247 RFG70N06

RFP70N06 TO-220AB RFP70N06

RF1S70N06 TO-262AA F1S70N06

RF1S70N06SM TO-263AB F1S70N06

NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

Features

• 70A, 60V

DS(on)

= 0.014 Ω

®

Model

•r

• Temperature Compensated PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

o

• 175

C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

©2002 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. C

JEDEC TO-263AB

JEDEC TO-262AA

±

µ

µ

θ

θ

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFG70N06, RFP70N06

RF1S70N06, RF1S70N06SM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

DSS

DGR

D

DM

GS

AS

D

, T

J

STG

L

pkg

Refer to Peak Current Curve

60 V
60 V
70

20 V

Refer to UIS Curve A

150

1.0

W/

-55 to 175

300
260

A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

1. T

Electrical Specifications

C to 150

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

(OFF)

g(TOT)

Gate Charge at 10V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

(ON)

r

f

g(10)

g(TH)

ISS

OSS

RSS

JC

JA

I

= 250 µ A, V

D

V

= V

GS

V

= 60V, V

DS

V

= 0.8 x Rated BV

DS

V

= ± 20V - - ± 100 nA

GS

I

= 70A, V

D

V

= 30V, I

DD

V

= 10V, R

GS

(Figure 13)

= 0V (Figure 11) 60 - - V

GS

, I

= 250 µ A (Figure 10) 2 - 4 V

DS

D

= 0V - - 1

GS

, T

DSS

= 10V (Figure 9) - - 0.014 Ω

GS

D

GS

70A, R

≈

= 2.5 Ω

= 0.43 Ω ,

L

= 150

C

o

C--25

- - 125 ns

-12- ns

-50- ns

-40- ns

-15- ns

- - 125 ns

V

= 0V to 20V V

GS

V

= 0V to 10V - 100 115 nC

GS

V

= 0V to 2V - 5.5 6.5 nC

GS

V

= 25V, V

DS

= 0V, f = 1MHz

GS

(Figure 12)

= 48V, I

DD

R

= 0.68 Ω

L

I

= 2.2mA

g(REF)

(Figure 13)

= 70A,

D

- 185 215 nC

- 3000 - pF

- 900 - pF

- 300 - pF

- - 1.0

TO-220 and TO-263 - - 62

TO-247 - - 30

o

o

o

A

A

C/W

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2002 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. C

I

= 70A - 1.5 V

SD

I

= 70A, dI

SD

/dt = 100A/ µ s - 125 ns

SD

30

10

0

25 50 75 100

125

150

50

I

D

, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

70

175

40

20

60

80

t, PULSE WIDTH (s)

50

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

100

I

DM

, PEAK CURRENT (A)

1000

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

II

25

175 T

C

–

150

-----------------------







=

TC = 25oC

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

T

= 25

C

125 150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

o

C, Unless Otherwise Specified

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01
10

500

100

©2002 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Rev. C

OPERATION IN THIS
AREA MAY BE

10

LIMITED BY r

, DRAIN CURRENT (A)

D

I

T

= 25oC

C

= MAX RATED

T

J

SINGLE PULSE

1

1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10

P

DM

t

1

t

x R

2

+ T

JC

C

θ

1

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

-2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

1/t2

JC

θ

0

10

100