Fairchild Semiconductor RFP50N06 Datasheet
G
D
S
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG50N06 TO-247 RFG50N06
RFP50N06 TO-220AB RFP50N06
RF1S50N06SM TO-263AB F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247 JEDEC TO-220AB
Features
• 50A, 60V
DS(ON)
= 0.022 Ω
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
• 175
C Operating Temperature
Symbol
®
Model
SOURCE
DRAIN
DRAIN
(BOTTOM
SIDE METAL)
©2002 Fairchild Semiconductor Corporation RFG50N06, RFP50N06, RF1S50N06SM Rev. B
GATE
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
±
µ
µ
±
Ω
θ
θ
RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
RFG50N06, RFP50N06
RF1S50N06SM UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
D
DM
AS
D
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
20 V
50
(Figure 5)
(Figure 6)
131
0.877
-55 to 175
300
260
W/
A
W
o
C
o
C
o
C
o
C
NOTE:
J
= 25
o
C to 150
1. T
Electrical Specifications
o
C.
o
T
= 25
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(10)
g(TH)
ISS
OSS
RSS
JC
JA
I
= 250 µ A, V
D
V
= V
GS
DS
V
= 60V,
DS
V
= 0V
GS
V
= ± 20V - -
GS
I
= 50A, V
D
V
= 30V, I
DD
R
= 0.6 Ω , V
L
R
= 3.6 Ω
GS
(Figure 13)
= 0V (Figure 11) 60 - - V
GS
, I
= 250 µ A (Figure 10) 2 - 4 V
D
T
T
o
= 25
C--1
C
o
= 150
C
C--50
100 nA
= 10V (Figures 9) - - 0.022
GS
= 50A
D
GS
= 10V
- - 95 ns
-12 - ns
-55 - ns
-37 - ns
-13 - ns
- - 75 ns
V
= 0 to 20V V
GS
V
= 0 to 10V - 67 80 nC
GS
V
= 0 to 2V - 3.7 4.5 nC
GS
V
= 25V, V
DS
GS
f = 1MHz
(Figure 12)
DD
R
L
I
g(REF)
(Figure 13)
= 0V
= 48V, I
= 0.96 Ω
= 1.45mA
= 50A,
D
- 125 150 nC
- 2020 - pF
- 600 - pF
- 200 - pF
(Figure 3) - - 1.14
TO-247 - - 30
TO-220, TO-263 - - 62
o
o
o
A
A
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
©2002 Fairchild Semiconductor Corporation RFG50N06, RFP50N06, RF1S50N06SM Rev. B
SD
rr
I
= 50A - - 1.5 V
SD
I
= 50A, dI
SD
/dt = 100A/ µ s - - 125 ns
SD
50
40
30
20
10
0
25 50 75 100 125 150 175
I
D
,
DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
60
10-310
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
t, PULSE WIDTH (ms)
VGS = 20V
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
175 T
C
–
150
------------------------
=
I
DM
,
PEAK CURRENT (A)
40
TC = 25oC
RFG50N06, RFP50N06, RF1S50N06SM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.2
0.1
0.1
THERMAL IMPEDANCE
0.01
0.05
0.02
0.01
SINGLE PULSE
-5
10
-4
10
, NORMALIZED
θJC
Z
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1 10 100
DS(ON)
DRAIN TO SOURCE VOLTAGE (V)
V
DS,
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation RFG50N06, RFP50N06, RF1S50N06SM Rev. B
V
DSS(MAX)
-3
10
t1, RECTANGULAR PULSE DURATION (s)
= MAX RATED
T
J
SINGLE PULSE
TC = 25oC
= 60V
100µs
1ms
10ms
100ms
DC
P
DM
t
1
t
θJC
2
x R
2
+ T
θJC
C
1
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
0
10