Fairchild Semiconductor RFP45N06 Datasheet

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

RFG45N06, RFP45N06, RF1S45N06SM

Data Sheet January 2002

45A, 60V, 0.028 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA49028.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG45N06 TO-247 RFG45N06

RFP45N06 TO-220AB RFP45N06

RF1S45N06SM TO-263AB F1S45N06

NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.

RF1S45N06SM9A.

Features

• 45A, 60V

DS(ON)

= 0.028 Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• 175

C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

GATE

GATE

JEDEC TO-263AB

DRAIN

(FLANGE)

©2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B

±

µ

µ

±

Ω

θ

θ

RFG45N06, RFP45N06, RF1S45N06SM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFG45N06, RFP45N06

RF1S45N06SM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20K Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V

G

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

D

DM

GS

AS

D

, T

J

STG

Refer to Peak Current Curve

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V
45

20 V

Refer to UIS Curve

131

0.877

-55 to 175

300
260

W/

A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 150

1. T

Electrical Specifications

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 10V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

GSS

ON

OFF

g(10)

g(TH)

ISS

OSS

RSS

I

DSS

D

V

GS

V

DS

V

DS

V

GS

I

D

V

DD

R

L

R

G

r

f

V

GS

V

GS

V

GS

V

DS

f = 1MHz (Figure 12)

JC

JA

= 250 µ A, V

= V

DS

= Rated BV

= 0.8 x Rated BV

= ± 20V - -

= 45A, V

= 30V, I

= 0.667 Ω , V

= 3.6 Ω (Figure 13)

= 0V (Figure 11) 60 - - V

GS

, I

= 250 µ A (Figure 10) 2 - 4 V

D

, V

DSS

= 0V - - 1

DSS

GS

, V

GS

= 0V (125

o

C) - - 25

100 nA

= 10V (Figure 9) - - 0.028

GS

= 45A

D

GS

= +10V

- - 120 ns

-12- ns

-74- ns

-37- ns

-16- ns

- - 80 ns

= 0 to 20V V

= 0 to 10V - 67 80 nC

= 0 to 2V - 3.7 4.5 nC

= 25V, V

GS

DD

R

= 1.07 Ω

L

I

g(REF)

(Figure 13)

= 0V

= 48V, I

= 1.5mA

= 45A,

D

- 125 150 nC

- 2050 - pF

- 600 - pF

- 200 - pF

- - 1.14

--80

o

C/W

o

C/W

A

A

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300 µ s, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B

I

= 45A - - 1.5 V

SD

I

= 45A, dI

SD

/dt = 100A/ µ s - - 125 ns

SD

50

40

30

20

10

0

25 50 75 100 125 150 175

I

D

,

DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

10-310

-2

10

-1

10

0

10

1

10

2

10

3

10

4

10

2

10

3

t, PULSE WIDTH (ms)

VGS = 20V

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

II

25

175 T

C

–

150

------------------------







=

I

DM

,

PEAK CURRENT (A)

40

TC = 25oC

RFG45N06, RFP45N06, RF1S45N06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

0.05

0.02

THERMAL IMPEDANCE

, NORMALIZED TRANSIENT

JC

θ

Z

0.01

0.01

SINGLE PULSE

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

400

100

10

, DRAIN CURRENT (A)

D

I

1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

©2002 Fairchild Semiconductor Corporation RFG45N06, RFP45N06, RF1S45N06SM Rev. B

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1 10 100

DS(ON)

DRAIN TO SOURCE VOLTAGE (V)

V

DS,

V

DSS(MAX)

-3

10

t, RECTANGULAR PULSE DURATION (s)

= MAX RATED

T

J

SINGLE PULSE

TC = 25oC

= 60V

100µs

1ms

10ms

100ms

DC

P

DM

t

1

t

1/t2

JC

x R

2

+ T

JC

C

θ

1

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θ

0

10