Fairchild Semiconductor RFP30N06LE Datasheet

G

D

S

DRAIN

(FLANGE)

GATE

SOURCE

RFP30N06LE, RF1S30N06LESM

Data Sheet January 2002

30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP30N06LE TO-220AB F30N06LE

RF1S30N06LESM TO-263AB 1S30N06L

NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Features

• 30A, 60V

•r

• 2kV ESD Protected

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047 Ω

DS(ON)

Components to PC Boards”

®

Model

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

©2002 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B

µ

± 10 µ

θ

θ

RFP30N06LE, RF1S30N06LESM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

A

RFP30N06LE, RF1S30N06LESM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

= 20k Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DSS

DGR

GS

DM

AS

D

D

Refer to Peak Current Curve

Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

+10, -8 V

30

Refer to UIS Curve

96

0.645

-55 to 175

300
260

W/

A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

1. T

Electrical Specifications

C to 150

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Turn-Off Time t

Total Gate Charge Q

g(TOT)

Gate Charge at 5V Q

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance Junction to Case R

Thermal Resistance Junction to Ambient R

DSS

DSS

GSS

ON

OFF

g(5)

g(TH)

ISS

OSS

RSS

I

V

V

V

V

I

V
R
Figures 13, 16, 17

r

f

V

V

V

V
f = 1MHz
Figure 12

JC

JA

= 250 µ A, V

D

= V

GS

DS

= Rated B

DS

= 0.8 x Rated B

DS

= +10, -8V - -

GS

= 30A, V

D

= 30V, I

DD

= 2.5 Ω,

GS

= 0V, Figure 11 60 - - V

GS

, I

= 250 µ A, Figure 10 1 - 2 V

D

, V

VDSS

= 5V, Figure 9 - - 0.047 Ω

GS

= 30A, R

D

= 0 - - 25

GS

VDSS

, V

= 1 Ω , V

L

GS

= 0, T

GS

= 5V,

= 150

C

o

C - - 250 µ A

- - 140 ns

-11- ns

-88- ns

-30- ns

-40- ns

- - 100 ns

= 0V to 10V V

GS

= 0V to 5V - 28 34 nC

GS

= 0V to 1V - 1.8 2.6 nC

GS

= 25V, V

DS

GS

= 0V,

= 48V,

DD

I

= 30A,

D

R

= 1.6 Ω

L

Figures 18, 19

-5162nC

- 1350 - pF

- 290 - pF

-85-pF

- - 1.55

--80

o

o

A

A

C/W

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

©2002 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B

I

= 30A - - 1.5 V

SD

I

rr

= 30A, dI

SD

/dt

= 100A/ µ s - - 125 ns

SD

TC, CASE TEMPERATURE (oC)

I

D

,

DRAIN CURRENT (A)

40

20

10

0

25 50 75 100

125 150

175

30

t, PULSE WIDTH (s)

I

DM

, PEAK CURRENT CAPABILITY (A)

500

100

20

10

-6

10

-5

10

-4

10

-3

10

-2

10-110

0

10

1

VGS = 5V

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

VGS = 10V

II

25

175 T

c

–

150

-----------------------







=

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

TC = 25oC

RFP30N06LE, RF1S30N06LESM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

150

175

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

0.01

200

100

(A)

10

DRAIN CURRENT
,

D

I

1

1 10 100

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

©2002 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

T

-3

10

t, RECTANGULAR PULSE DURATION (s)

TC = 25oC

= MAX RATED

J

100ms

1ms

10ms

100ms

DC

-2

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

1/t2

x R

JC

JC

θ

θ

0

10

FIGURE 5. PEAK CURRENT CAPABILITY

+ T

C

1

10