Fairchild Semiconductor RFP15N05L Datasheet

RFP15N05L, RFP15N06L

Data Sheet January 2002

15A, 50V and 60V, 0.140 Ohm, Logic Level
N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA0522.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP15N05L TO-220AB RFP15N05L

RFP15N06L TO-220AB RFP15N06L

NOTE: When ordering, use the entire part number.

Features

• 15A, 50V and 60V

•r

• Design Optimized for 5V Gate Drives

• Can be Driven from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.140 Ω

DS(ON)

Components to PC Boards”

Symbol

D

Packaging

DRAIN

(TAB)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

G

S

©2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B

± 10 ±

µ

θ

RFP15N05L, RFP15N06L

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFP15N05L RFP15N06L UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20k Ω) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Above T

o

= 25

C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DSS

DGR

D

DM

GS

D

T

J,

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 60 V

50 60 V

15
40

15
40

10 V

60

0.48

60

0.48

-55 to 150 -55 to 150

300
260

300
260

W/

A
A

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

C to 125

1. T

Electrical Specifications

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

I

= 250 µ A, V

D

GS

= 0V

RFP15N05L 50 - - V

RFP15N06L 60 - - V

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Resistance (Note 2) r

DS(ON)

Input Capacitance C

Output Capacitance C

Reverse-Transfer Capacitance C

Turn-On Delay Time t

GS(TH)

DSS

GSS

ISS

OSS

RSS

d(ON)

V

= V

GS

V

= 48V, V

DS

V

= 48V, V

DS

V

= ± 10V, V

GS

I

= 15A, V

D

V

= 25V, V

DS

(Figure 8)

V

= 30V, I

DD

, I

= 250 µ A (Figure 7) 1 - 2 V

DS

D

= 50V - - 1

DS

= 50V TC = 125

DS

= 0V - - 100 nA

DS

= 5V (Figures 5, 6) - - 0.140 Ω

GS

= 0V, f = 1MHz

GS

o

C--50 µ A

- - 900 pF

- - 450 pF

- - 200 pF

= 7.5A, R

D

= 6.25 Ω

G

-1640ns

(Figures 10, 11)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

R

r

V

f

JC

= 5V - 225 325 ns

GS

RFP15N05L, RFP15N06L - - 2.083

- 250 325 ns

- 200 325 ns

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

o

A

C/W

Source to Drain Diode Voltage (Note 2) V

Diode Reverse Recovery Time t

SD

rr

I

= 7.5A - - 1.4 V

SD

I

= 4A, dI

SD

/dt = 100A/ µ s - 225 - ns

SD

NOTE:

2. Pulsed: pulse duration = ≤ 300 µ s maximum, duty cycle = ≤ 2%.

3. Repititive rating: pulse width limited by maximum junction temperature.

©2002 Fairchild Semiconductor Corporation RFP15N05L, RFP15N06L Rev. B