Fairchild Semiconductor RFP10P03L Datasheet

May 1997

RFD10P03L, RFD10P03LSM,

SEMICONDUCTOR

RFP10P03L

10A, 30V, 0.200Ω, Logic Level

P-Channel Power MOSFET

Features

• 10A, 30V

•r

Temperature Compensating

•

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

= 0.200Ω

DS(ON)

o

C Operating Temperature

PSPICE Model

Ordering Information

PART NUMBER P ACKAGE BRAND

RFD10P03L TO-251AA 10P03L
RFD10P03LSM TO-252AA 10P03L
RFP10P03L TO-220AB F10P03L

NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain theTO-252AA variant in tape and reel, i.e.RFD10P03LSM9A..

Formerly developmental type TA49205.

Description

These products are P-Channel power MOSFETs manufac­tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti­mum utilization of silicon, resulting in outstanding perfor­mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.

Symbol

D

G

S

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-251AA

SOURCE

DRAIN

GATE

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

1

File Number 3515.1

RFD10P03L, RFD10P03LSM, RFP10P03L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD10P03L, RFD10P03LSM,

RFP10P03L UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20KΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

-30 V

-30 V

±10 V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

D

DM

AS

D

L

10

See Figure 5

Refer to UIS Curve

65

0.43

-55 to 175
300

A

W

W/oC

o

C

o

C

(0.063in (1.6mm) from case for 10s)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance

r

DS(ON)ID

(Note 1)

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)

Gate Charge at -5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

ON

r

f

OFF

g(-5)

g(TH)

ISS
OSS
RSS

θJC

θJA

ID = 250µA, VGS = 0V -30 - - V
VGS = VDS, ID = 250µA -1 - -2 V
VDS = -30V, TC = 25oC---1µA
V

= 0V TC = 150oC - - -50 µA

GS

VGS = ±10V - - ±100 nA

= 10A, VGS = -5V - - 0.200 Ω
ID = 10A, VGS = -4.5V 0.220 Ω
VDD = 15V, ID≅ 10A

RL = 1.5Ω, RGS = 5Ω,
VGS = -5V

- - 100 ns

-15- ns

-50- ns

-35- ns

-20- ns

- - 80 ns
VGS = 0 to -10V VDD = -24V,
VGS = 0 to -5V - 13 16 nC

ID≅ 10A,
RL = 2.4Ω

-2530nC

VGS = 0 to -1V - 1.2 1.5 nC
VDS = -25V, VGS = 0V

f = 1MHz

- 1035 - pF

- 340 - pF

-35- pF

- - 2.30
RFD10P03L, RFD10P03LSM - - 100
RFP10P03L 80

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Forward Voltage V
Reverse Recovery Time t

NOTE:

1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.

SD

rr

ISD = -10A - - -1.5 V
ISD = -10A, dISD/dt = -100A/µs--75ns

2

RFD10P03L, RFD10P03LSM, RFP10P03L

Typical Performance Curves

Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 175

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

2.0

1.0

0.5

150

-12

-10

-8

-6

-4

, DRAIN CURRENT (A)

D

I

-2

0

25 50 75 100

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

0.05

0.02

0.01

, NORMALIZED THERMAL IMPEDANCE

θJC

Z

0.01
10

SINGLE PULSE

-5

-100

-10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

-1

-1 -10

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-4

10

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-100

VGS = -10V

VGS = -5V

-10

, PEAK CURRENT CAPABILITY (A)

DM

I

-5

-5

10

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

V

DSS

MAX = -30V

TJ = MAX RATED

= 25oC

T

C

100µs

1ms

10ms
100ms

DC

-100

-2

10

P

DM

xR

θJC

0

10

175 TC–



II

=

----------------------- -



25

150



-1

10

t

1

t

2

+ T

θJC

T

C

10

2

C

= 25oC

0

1

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

RFD10P03L, RFD10P03LSM, RFP10P03L

Typical Performance Curves

-50

-10
STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)
I

= (L) (IAS)/(1.3 RATED BV

t

AV

AS

IF R ≠ 0
t

= (L/R) ln [(IAS*R)/(1.3 RATED BV

AV

-1

0.01 0.1 1 10
t

, TIME IN AVALANCHE (ms)

AV

DSS

Unless Otherwise Specified (Continued)

STARTING TJ = 25oC

- VDD)

- VDD) + 1]

DSS

NOTE: Refer to Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

-25
PULSE TEST

PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX

-20
VDD= -15V

-15

-10

-5

, ON-STATE DRAIN CURRENT (A)

D(ON)

I

0

0 -3.0 -4.5 -6.0-1.5

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

175oC

25oC

-25

PULSE DURATION = 250µs,

= 25oC

T

C

-20

= -10V

V

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

0 -1.0

GS

VDS, DRAIN TO SOURCE VOLTAGE (V)

-2.0

VGS = -5V

V

-3.0 -5.0

FIGURE 7. SATURATION CHARACTERISTICS

400

ID = -20A

= -10A

I

300

200

DRAIN TO SOURCE

100

ON RESISTANCE (mΩ)

DS(ON),

r

0

-2.0 -4.0 -6.0 -8.0 -10.0
, GATE TO SOURCE VOLTAGE (V)

V

GS

D

= -5A

I

D

I

= -2.5A

D

= -4V

GS

VGS =-3.5V

VGS = -3V

-4.0

T

= 25oC

C

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

2.0
VGS = -5V, ID = -10.0A

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0.0

-80

-40 0
T

, JUNCTION TEMPERATURE (oC)

J

40

120

80

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

160 200

VOLTAGE AND DRAIN CURRENT

1.2
ID =- 250uA

1.1

1.0

0.9

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.8

-80 160 200

-40 0 40
, JUNCTION TEMPERATURE (oC)

T

J

120

80

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

4