Fairchild Semiconductor RFG60P06E Datasheet
RFG60P06E
Data Sheet January 2002
60A, 60V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
The RFG60P06E P-Channel power MOSFET is
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA09836.
Ordering Information
PART NUMBER PACKAGE BRAND
RFG60P06E TO-247 RFG60P06E
NOTE: When ordering use the entire part numberr RFG60P06E.
Packaging
Features
• 60A, 60V
•r
• Temperature Compensating PSPICE
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
= 0.030 Ω
DS(ON)
o
C Operating Temperature
Symbol
D
G
S
®
Model
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B
C
± ±
µ
Ω
θ
θ
RFG60P06E
Absolute Maximum Ratings
o
T
= 25
C
RFG60P06E UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3, Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
MIL-STD-883, Category B(2)
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
D
DM
AS
SD
D
, T
J
STG
Refer to Peak Current Curve
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
-60 V
-60 V
20 V
60
Refer to UIS Curve
2KV
215
1.43
-55 to 175
300
260
W/
A
W
o
C
o
C
o
C
o
C
NOTE:
J
= 25
o
1. T
Electrical Specifications
C to 150
o
C.
o
T
= 25
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate To Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(-10)
g(TH)
ISS
OSS
RSS
JC
JA
I
= 250 µ A, V
D
V
= V
GS
DS
V
= -60V,
DS
V
= 0V
GS
V
= ± 20V - - 100 nA
GS
I
= 60A, V
D
V
= -30V, I
DD
R
= 1.0 Ω , V
L
R
= 2.5 Ω
GS
= 0V -60 - - V
GS
, I
= 250 µ A -2--4 V
D
= -10V - - 0.030
GS
= 30A,
D
= -10V,
GS
T
T
o
= 25
C---1 µ A
C
o
= 150
C
C - - -50
- - 125 ns
-20- ns
-60- ns
-65- ns
-20- ns
- - 125 ns
V
= 0 to -20V V
GS
V
= 0 to -10V - - 225 nC
GS
V
= 0 to -2V - - 15 nC
GS
V
= -25V, V
DS
GS
f = 1MHz
DD
I
D
R
L
= 0V,
= -48V,
= 60A,
= 0.8 Ω
- - 450 nC
- 7200 - pF
- 1700 - pF
- 325 - pF
- - 0.70
--80
o
o
A
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse test: pulse width ≤ 300 µ s maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B
I
= 45A - - 1.5 V
SD
I
= 45A, dI
SD
/dt = 100A/ µ s - - 125 ns
SD
-50
-40
-30
-20
-10
0
25 50 75 100 125 150 175
I
D
,
DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
-60
-70
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
-10
3
t , PULSE WIDTH (ms)
I
DM
,
PEAK CURRENT (A)
-50
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
175 T
C
–
150
------------------------
=
TC = 25oC
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
RFG60P06E
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0.5
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.2
0.1
0.1
THERMAL IMPEDANCE
0.01
10
-5
0.05
0.02
0.01
SINGLE PULSE
-4
10
NORMALIZED
θJC,
Z
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-500
-100
-10
DRAIN CURRENT (A)
,
D
I
-1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation RFG60P06E Rev. B
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
TC = 25oC
-1 -10 -60
DS(ON)
DRAIN TO SOURCE VOLTAGE (V)
V
DS,
V
MAX = -60V
DSS
-3
10
t , RECTANGULAR PULSE DURATION (s)
100µs
1ms
10ms
100ms
DC
-2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
P
DM
t
1
t
2
1/t2
x R
θJC
+ T
C
1
10
θJC
0
10
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