Fairchild Semiconductor RFG60P03 Datasheet

RFG60P03, RFP60P03,

SEMICONDUCTOR

RF1S60P03, RF1S60P03SM

December 1995

Features

• 60A, 30V

•r

•

= 0.027Ω

DS(ON)

Temperature Compensating

PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

• +175

C Operating Temperature

Description

The RFG60P03, RFP60P03, RF1S60P03 and
RF1S60P03SM P-Channel power MOSFETs are manufac­tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

PACKAGE AVAILABILITY

PART NUMBER PACKAGE BRAND

RFG60P03 TO-247 RFG60P03
RFP60P03 TO-220AB RFP60P03
RF1S60P03 TO-262AA F1S60P03
RF1S60P03SM TO-263AB F1S60P03

NOTE: When ordering use the entire part number.

Formerly developmental type TA49045.

60A, 30V, Avalanche Rated, P-Channel

Enhancement-Mode Power MOSFETs

Packages

JEDEC STYLE TO-247

SOURCE

DRAIN

DRAIN

GATE

GATE

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

DRAIN

(FLANGE)

JEDEC TO-220AB

JEDEC TO-262AA

A

SOURCE

SOURCE

DRAIN

Symbol

D

JEDEC TO-263AB

G

GATE

S

Absolute Maximum Ratings T

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation

TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1995

= +25oC

C

4-51

SOURCE

RFG60P03, RFP60P03,

RF1S60P03, RFS60P03SM UNITS

DSS

DGR

GS

D

Refer to Peak Current Curve

DM

AS

D

T

STG

Refer to UIS Curve

A

M

A

DRAIN

(FLANGE)

-30 V

-30 V

±20 V

60

176

1.17

-55 to +175

File Number 3951.1

A

W

W/oC

o

C

Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM

Electrical Specifications T

= +25oC, Unless Otherwise Specified.

C

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Zero Gate Voltage Drain Current I

Gate-Source Leakage Current I

On Resistance r

Turn-On Time t

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Turn-Off Time t

Total Gate Charge Q

Gate Charge at 10V Q

DSS

GS(TH)

DSS

GSS

DS(ON)

ON

D(ON)

R

D(OFF)

F

OFF

G(TOT)

G(-10)

ID = 250µA, VGS = 0V -30 - - V

VGS = VDS, ID = 250µA -2 - -4 V

VDS = -30V,

TC = +25oC---1µA

VGS = 0V

T

= +150oC - - -50 µA

C

VGS = ±20V - - 100 nA

ID = 60A, VGS = -10V - - 0.027 Ω

VDD = -15V, ID = 60A

- - 140 ns
RL = 0.25Ω, VGS = -10V
RGS = 2.5Ω

-20-ns

-75-ns

-35-ns

-40-ns

- - 115 ns

VGS = 0 to -20V VDD = -24V,

- 190 230 nC

ID = 60A,

VGS = 0 to -10V - 100 120 nC

RL = 0.4Ω

Threshold Gate Charge Q

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Ambient R

G(TH)

ISS

OSS

RSS

θJC

θJA

Source-Drain Diode Ratings and Specifications

PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V

Reverse Recovery Time t

SD

RR

ISD = -60A - - -1.75 V

ISD = -60A, dISD/dt = -100A/µs - - 200 ns

VGS = 0 to -2V - 7.5 9 nC

VDS = -25V, VGS = 0V

- 3000 - pF
f = 1MHz

- 1500 - pF

- 525 - pF

- - 0.85

--80

o

C/W

o

C/W

4-52