Fairchild Semiconductor RFD4N06LSM Datasheet

G

D

S

GATE

SOURCE

DRAIN
(FLANGE)

RFD4N06L, RFD4N06LSM

Data Sheet January 2002

4A, 60V, 0.600 Ohm, Logic Level,
N-Channel Power MOSFETs

The RFD4N06L, RFD4N06LSM are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5 volt) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conduction at gate biases in the 3-5 volt
range, thereby facilitating true on-off power control from logic
circuit supply voltages.

Formerly developmental type TA09520.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD4N06L TO-251AA RFD4N06L

RFD4N06LSM TO-252AA RFD4N06LSM

NOTE: When ordering, use the entire part number.

Features

• 4A, 60V

•r

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly From Q-MOS, N-MOS,
or TTL Circuits

• SOA is Power Dissipation Limited

• 175

• Logic Level Gate

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.600 Ω

DS(ON)

o

C Rated Junction Temperature

Components to PC Boards”

Symbol

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

DRAIN

(FLANGE)

©2002 Fairchild Semiconductor Corporation RFD4N06L, RFD4N06LSM Rev. B

GATE

±1

µ

µ

Ω

θ

RFD4N06L, RFD4N06LSM

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

RFD4N06L

RFD4N06LSM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derated above 25

o

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DS

DGR

GS

D

DM

D

T

J,

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V

60 V

0V

4A

10 A

30

0.20

-55 to 175

300
260

W/

W

o

C

o

C

o

C

o

C

NOTE:

J

= 25

o

1. T

Electrical Specifications

C to 150

o

C.

o

T

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

Gate to Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On Voltage (Note 2) V

Drain to Source On Resistance (Note 2) r

Forward Transconductance (Note 2) V

Turn-On Delay Time t

DS(ON)

DS(ON)

(plateau)

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Total Gate Charge

Q

g(TOT)

(Gate to Source + Gate to Drain)

Gate Charge at 5V Q

Threshold Gate Charge Q

Thermal Resistance Junction to Case R

DSS

GSS

g(TH)

DSS

r

f

g(5)

JC

I

= 1mA, V

D

V

= V

GS

T

= 25

C

T

= 125

C

V

= ±10V, V

GS

I

= 1A, V

D

I

= 2A, V

D

I

= 4A, V

D

I

= 1A, V

D

V

= 15V, I

DS

V

= 30V, I

DD

V

= 5V

GS

= 0V 60 - - V

GS

, I

= 250 µ A 1 - 2.5 V

DS

D

o

C, V

= 50V, V

DS

o

C, V

= 50V, V

DS

= 0V - - ±100 nA

DS

= 5V - - 0.8 V

GS

= 5V - - 2.0 V

GS

= 7.5V - - 4.0 V

GS

= 5V - - 0.600

GS

= 4A - - 4.5 V

D

= 1A, R

D

= 0V - - 1

GS

= 0V - - 50

GS

= 6.25 Ω,

GS

- - 20 ns

- - 130 ns

- - 40 ns

- - 160 ns

V

= 0-10V V

GS

V

= 0-5V - - 5 nC

GS

V

= 0-1V - - 1 nC

GS

DD

I

D

R

L

= 48V,

= 2A,

= 24 Ω

--8nC

--5

o

A

A

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

Reverse Recovery Time t

NOTES:

2. Pulsed: pulse duration = 300 µ s max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

©2002 Fairchild Semiconductor Corporation RFD4N06L, RFD4N06LSM Rev. B

SD

rr

I

= 1A - - 1.4 V

SD

I

= 2A, dI

SD

/dt = 100A/ µ s - 150 - ns

SD