Fairchild Semiconductor RFD3055LE, RFD3055LESM, RFP3055LE Datasheet
D
G
S
SOURCE
DRAIN (FLANGE)
GATE
DRAIN
RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet January 2002
11A, 60V, 0.107 Ohm, Logic Level,
N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD3055LE TO-251AA F3055L
RFD3055LESM TO-252AA F3055L
RFP3055LE TO-220AB FP3055LE
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252 variant in tape and reel, e.g. RFD3055LESM9A.
Features
• 11A, 60V
DS(ON)
= 0.107 Ω
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
DRAIN (FLANGE)
JEDEC TO-220AB JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
±
µ
µ
θ
θ
RFD3055LE, RFD3055LESM, RFP3055LE
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
RFD3055LE, RFD3055LESM,
RFP3055LE UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
DSS
DGR
GS
D
DM
AS
D
, T
J
STG
Refer to Peak Current Curve
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
16 V
11
Refer to UIS Curve
38
0.25
-55 to 175
300
260
W/
A
W
o
C
o
C
o
C
o
C
NOTE:
J
= 25
o
1. T
Electrical Specifications
C to 150
o
C.
o
T
= 25
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSS
DSS
GSS
ON
r
f
OFF
g(5)
g(TH)
ISS
OSS
RSS
JC
JA
I
= 250 µ A, V
D
V
= V
GS
DS
V
= 55V, V
DS
V
= 50V, V
DS
V
= ± 16V - - ± 100 nA
GS
I
= 8A, V
D
V
30V, I
≈
DD
V
= 4.5V, R
GS
(Figures 10, 18, 19)
= 0V 60 - - V
GS
, I
= 250 µ A1-3V
D
= 0V - - 1
GS
= 0V, T
GS
= 5V (Figure 11) - - 0.107 Ω
GS
= 8A,
D
= 32 Ω
GS
= 150
C
o
C - - 250
- - 170 ns
-8 - ns
- 105 - ns
-22 - ns
-39 - ns
- - 92 ns
V
= 0V to 10V V
GS
V
= 0V to 5V - 5.2 6.2 nC
GS
V
= 0V to 1V - 0.36 0.43 nC
GS
V
= 25V, V
DS
= 0V, f = 1MHz
GS
(Figure 14)
= 30V, I
DD
I
g(REF)
D
= 1.0mA
(Figures 20, 21)
= 8A,
- 9.4 11.3 nC
- 350 - pF
- 105 - pF
-23 - pF
- - 3.94
TO-220AB - - 62
TO-251AA, TO-252AA - - 100
o
o
o
A
A
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Diode Reverse Recovery Time t
SD
rr
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
I
= 8A - 1.25 V
SD
I
= 8A, dI
SD
/dt = 100A/ µ s - 66 ns
SD
5
10
15
25 50 75 100 125 150 175
0
I
D
, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
V
GS
= 10V
V
GS
= 4.5V
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
200
10
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 5V
RFD3055LE, RFD3055LESM, RFP3055LE
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
25 50 75 100
0
0
TC, CASE TEMPERATURE (oC)
Unless Otherwise Specified
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
10
175
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
-3
t, RECTANGULAR PULSE DURATION (s)
-2
10
CASE TEMPERATURE
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
θJC
10
P
DM
1/t2
x R
0
θJC
t
1
+ T
t
2
C
1
10
FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE
100
10
OPERATION IN THIS
, DRAIN CURRENT (A)
D
I
©2002 Fairchild Semiconductor Corporation RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
AREA MAY BE
1
LIMITED BY r
SINGLE PULSE
TJ = MAX RATED
0.1
1 10 100
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
T
= 25oC
C
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
100µs
1ms
10ms
200
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